ZnO-based low-voltage inverter with quantum-well-structured nanohybrid dielectric

Sung Hoon Cha, Min Suk Oh, Kwang H. Lee, Jeong M. Choi, Byoung H. Lee, Myung M. Sung, Seongil Im

Research output: Contribution to journalArticlepeer-review

18 Scopus citations


We report on the fabrication of 2-V-operating ZnO-based inverter with two n-channel thin-film transistors (TFTs) on 22-nm-thin organic/ inorganic nanohybrid dielectric, which contains AlOx /TiOxAlOx in triple-layer structure. The inverter shows a high voltage gain of ∼20 under the supply voltage (VDD) of 2 V but with a marginal transition voltage of 0.1 V (operation range of 0-2 V). To control the transition voltage to a more adequate value, an 8-V gate pulse was applied on driving ZnO-TFT so that some of the channel electrons would be tunneled through the AlOx -based barrier and trapped in the TiOχ -based layer. Our inverter then displayed an optimum transition voltage of 0.75 V.

Original languageEnglish
Pages (from-to)1145-1147
Number of pages3
JournalIEEE Electron Device Letters
Issue number10
StatePublished - 2008


  • Charge injection devices
  • Organic-inorganic nanohybrid
  • Thin-film transistors (TFTs)
  • ZnO


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