Thin-film oxides of Pt were grown reactively by rf magnetron sputtering and characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS). Oxygen incorporation of the films was adjusted by controlling the oxygen mixing ratio (OMR). XRD reflections indicated that these samples have an amorphous structure without crystalline ordering of the Pt-O phases. SEM pictures showed that the formation of protrusions appear under the condition of large OMR. The XPS spectra revealed chemical shifts of Pt 4 f peaks, which are ascribed to two different oxidation states of Pt. The amounts of the energy shifts are 1.0 and 2.1 eV, implying that the Pt oxide thin films are composed of PtO grains and intermediate oxides of PtO and PtO2.
|Number of pages||4|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Issue number||8 B|
|State||Published - 15 Aug 1999|
- Oxidation states
- Reactive sputtering
- X-ray photoelectron spectroscopy