Write current reduction in transition metal oxide based resistance-change memory

Seung Eon Ahn; Myoung Jae Lee; Youngsoo Park; Bo Soo Kang; Chang Bum Lee; Ki Hwan Kim; Sunae Seo; Dong Seok Suh; Dong Chirl Kim; Jihyun Hur; Wenxu Xianyu; Genrikh Stefanovich; Huaxiang Yin; In Kyeong Yoo; Jung Hyun Lee; Jong Bong Park; In Gyu Baek; Bae Ho Park

doi:10.1002/adma.200702081

Write current reduction in transition metal oxide based resistance-change memory

Seung Eon Ahn, Myoung Jae Lee, Youngsoo Park, Bo Soo Kang, Chang Bum Lee, Ki Hwan Kim, Sunae Seo, Dong Seok Suh, Dong Chirl Kim, Jihyun Hur, Wenxu Xianyu, Genrikh Stefanovich, Huaxiang Yin, In Kyeong Yoo, Jung Hyun Lee, Jong Bong Park, In Gyu Baek, Bae Ho Park

Department of Physics

Research output: Contribution to journal › Article › peer-review

163 Scopus citations

Abstract

Write current reduction in transition metal oxide based resistance-change memory is found by defining the storage node portion of the devices. It is estimated that, using just a single stacked cross-bar structure with a node size of 16 nm, it is possible to realize densities as high as 100 GB cm ^-2. A dominant current path is found to exist in the low-resistance state of unipolar resistance-change materials, a therefore a reduction in cell area does not reduce the operation current. Resistance Random Access Memory (RRAM) will not be easily scalable and the write current must be reduced by another method whenever the density is increased. At cell sizes below 500nm×500nm, the data suggests that there exists an extra factor which reduces the low-resistance-state (LRS) current density, decreasing the write current.

Original language	English
Pages (from-to)	924-928
Number of pages	5
Journal	Advanced Materials
Volume	20
Issue number	5
DOIs	https://doi.org/10.1002/adma.200702081
State	Published - 5 Mar 2008

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Ahn, S. E., Lee, M. J., Park, Y., Kang, B. S., Lee, C. B., Kim, K. H., Seo, S., Suh, D. S., Kim, D. C., Hur, J., Xianyu, W., Stefanovich, G., Yin, H., Yoo, I. K., Lee, J. H., Park, J. B., Baek, I. G., & Park, B. H. (2008). Write current reduction in transition metal oxide based resistance-change memory. Advanced Materials, 20(5), 924-928. https://doi.org/10.1002/adma.200702081

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title = "Write current reduction in transition metal oxide based resistance-change memory",

abstract = "Write current reduction in transition metal oxide based resistance-change memory is found by defining the storage node portion of the devices. It is estimated that, using just a single stacked cross-bar structure with a node size of 16 nm, it is possible to realize densities as high as 100 GB cm -2. A dominant current path is found to exist in the low-resistance state of unipolar resistance-change materials, a therefore a reduction in cell area does not reduce the operation current. Resistance Random Access Memory (RRAM) will not be easily scalable and the write current must be reduced by another method whenever the density is increased. At cell sizes below 500nm×500nm, the data suggests that there exists an extra factor which reduces the low-resistance-state (LRS) current density, decreasing the write current.",

author = "Ahn, {Seung Eon} and Lee, {Myoung Jae} and Youngsoo Park and Kang, {Bo Soo} and Lee, {Chang Bum} and Kim, {Ki Hwan} and Sunae Seo and Suh, {Dong Seok} and Kim, {Dong Chirl} and Jihyun Hur and Wenxu Xianyu and Genrikh Stefanovich and Huaxiang Yin and Yoo, {In Kyeong} and Lee, {Jung Hyun} and Park, {Jong Bong} and Baek, {In Gyu} and Park, {Bae Ho}",

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AU - Ahn, Seung Eon

AU - Lee, Myoung Jae

AU - Park, Youngsoo

AU - Kang, Bo Soo

AU - Lee, Chang Bum

AU - Kim, Ki Hwan

AU - Seo, Sunae

AU - Suh, Dong Seok

AU - Kim, Dong Chirl

AU - Hur, Jihyun

AU - Xianyu, Wenxu

AU - Stefanovich, Genrikh

AU - Yin, Huaxiang

AU - Yoo, In Kyeong

AU - Lee, Jung Hyun

AU - Park, Jong Bong

AU - Baek, In Gyu

AU - Park, Bae Ho

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AB - Write current reduction in transition metal oxide based resistance-change memory is found by defining the storage node portion of the devices. It is estimated that, using just a single stacked cross-bar structure with a node size of 16 nm, it is possible to realize densities as high as 100 GB cm -2. A dominant current path is found to exist in the low-resistance state of unipolar resistance-change materials, a therefore a reduction in cell area does not reduce the operation current. Resistance Random Access Memory (RRAM) will not be easily scalable and the write current must be reduced by another method whenever the density is increased. At cell sizes below 500nm×500nm, the data suggests that there exists an extra factor which reduces the low-resistance-state (LRS) current density, decreasing the write current.

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JO - Advanced Materials

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Write current reduction in transition metal oxide based resistance-change memory

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