Wideband low noise CMOS transimpedance amplifier for gigaHertz operation

C. Toumazou; S. M. Park

doi:10.1049/el:19960814

Wideband low noise CMOS transimpedance amplifier for gigaHertz operation

C. Toumazou
, S. M. Park

Electronic and Electrical Engineering

Research output: Contribution to journal › Article › peer-review

61 Scopus citations

Abstract

A novel low noise CMOS common gate transimpedance amplifier is presented. Simulated performances gives a 1.2GHz bandwidth, 1.6kΩ transimpedance gain, and very low input referred current noise. Results are comparable to those of a recent common base BiCMOS transimpedance amplifier.

Original language	English
Pages (from-to)	1194-1196
Number of pages	3
Journal	Electronics Letters
Volume	32
Issue number	13
DOIs	https://doi.org/10.1049/el:19960814
State	Published - 20 Jun 1996

Keywords

CMOS integrated circuits
Optical receivers

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10.1049/el:19960814

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@article{73f5d961abef43a2a84e1572e1f66509,

title = "Wideband low noise CMOS transimpedance amplifier for gigaHertz operation",

abstract = "A novel low noise CMOS common gate transimpedance amplifier is presented. Simulated performances gives a 1.2GHz bandwidth, 1.6kΩ transimpedance gain, and very low input referred current noise. Results are comparable to those of a recent common base BiCMOS transimpedance amplifier.",

keywords = "CMOS integrated circuits, Optical receivers",

author = "C. Toumazou and Park, \{S. M.\}",

year = "1996",

month = jun,

day = "20",

doi = "10.1049/el:19960814",

language = "English",

volume = "32",

pages = "1194--1196",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "John Wiley \& Sons Inc.",

number = "13",

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TY - JOUR

T1 - Wideband low noise CMOS transimpedance amplifier for gigaHertz operation

AU - Toumazou, C.

AU - Park, S. M.

PY - 1996/6/20

Y1 - 1996/6/20

N2 - A novel low noise CMOS common gate transimpedance amplifier is presented. Simulated performances gives a 1.2GHz bandwidth, 1.6kΩ transimpedance gain, and very low input referred current noise. Results are comparable to those of a recent common base BiCMOS transimpedance amplifier.

AB - A novel low noise CMOS common gate transimpedance amplifier is presented. Simulated performances gives a 1.2GHz bandwidth, 1.6kΩ transimpedance gain, and very low input referred current noise. Results are comparable to those of a recent common base BiCMOS transimpedance amplifier.

KW - CMOS integrated circuits

KW - Optical receivers

UR - https://www.scopus.com/pages/publications/0030165228

U2 - 10.1049/el:19960814

DO - 10.1049/el:19960814

M3 - Article

AN - SCOPUS:0030165228

SN - 0013-5194

VL - 32

SP - 1194

EP - 1196

JO - Electronics Letters

JF - Electronics Letters

IS - 13

ER -

Wideband low noise CMOS transimpedance amplifier for gigaHertz operation

Abstract

Keywords

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