Voltage Scaling of Graphene Device on SrTiO3 Epitaxial Thin Film

Jeongmin Park, Haeyong Kang, Kyeong Tae Kang, Yoojoo Yun, Young Hee Lee, Woo Seok Choi, Dongseok Suh

Research output: Contribution to journalArticlepeer-review

15 Scopus citations


Electrical transport in monolayer graphene on SrTiO3 (STO) thin film is examined in order to promote gate-voltage scaling using a high-k dielectric material. The atomically flat surface of thin STO layer epitaxially grown on Nb-doped STO single-crystal substrate offers good adhesion between the high-k film and graphene, resulting in nonhysteretic conductance as a function of gate voltage at all temperatures down to 2 K. The two-terminal conductance quantization under magnetic fields corresponding to quantum Hall states survives up to 200 K at a magnetic field of 14 T. In addition, the substantial shift of charge neutrality point in graphene seems to correlate with the temperature-dependent dielectric constant of the STO thin film, and its effective dielectric properties could be deduced from the universality of quantum phenomena in graphene. Our experimental data prove that the operating voltage reduction can be successfully realized due to the underlying high-k STO thin film, without any noticeable degradation of graphene device performance.

Original languageEnglish
Pages (from-to)1754-1759
Number of pages6
JournalNano Letters
Issue number3
StatePublished - 9 Mar 2016

Bibliographical note

Publisher Copyright:
© 2016 American Chemical Society.


  • Graphene
  • SrTiO
  • epitaxial thin film
  • gate voltage scaling
  • high-k
  • quantum Hall conductance


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