Vertical Double-gate SiC/Si/SiC Quantum-well 1T DRAM and Its High-temperature Performances

Engineering

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• Automotives 50%
• Band Gap 50%
• Data Retention 50%
• Erase Operation 50%
• High Integration Density 50%
• High Thermal Conductivity 50%
• Power Device 50%
• Power Electronics 50%
• Promising Candidate 50%
• Quantum Well 100%
• Retention Time 50%
• Temperature Condition 50%