Abstract
While nanowires show increasing promise for optoelectronic applications, probing the subwavelength details of their optical modes has been a challenge with light-based techniques. Here we report the excitation of dielectric optical waveguide modes in a single GaN nanowire using transition radiation generated by a 1 nm diameter electron beam. This spatially resolved study opens important gateways to probing the optical modes of more complex nanostructures, fundamental for optimization of optoelectronic device performance.
| Original language | English |
|---|---|
| Pages (from-to) | 4073-4077 |
| Number of pages | 5 |
| Journal | Nano Letters |
| Volume | 9 |
| Issue number | 12 |
| DOIs | |
| State | Published - 9 Dec 2009 |
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