Abstract
While nanowires show increasing promise for optoelectronic applications, probing the subwavelength details of their optical modes has been a challenge with light-based techniques. Here we report the excitation of dielectric optical waveguide modes in a single GaN nanowire using transition radiation generated by a 1 nm diameter electron beam. This spatially resolved study opens important gateways to probing the optical modes of more complex nanostructures, fundamental for optimization of optoelectronic device performance.
Original language | English |
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Pages (from-to) | 4073-4077 |
Number of pages | 5 |
Journal | Nano Letters |
Volume | 9 |
Issue number | 12 |
DOIs | |
State | Published - 9 Dec 2009 |