Abstract
γ-GeSe is a newly identified polymorph among group-IV monochalcogenides, characterized by a distinctive interatomic bonding configuration. Despite its promising applications in electrical and thermal domains, the experimental verification of its mechanical and thermal properties remains unreported. Here, we experimentally characterize the in-plane Young’s modulus (E) and thermal conductivity () of γ-GeSe. The mechanical vibrational modes of freestanding γ-GeSe flakes are measured using optical interferometry. Nano-indentation via atomic force microscopy is also conducted to induce mechanical deformation and to extract the E. Comparison with finite-element simulations reveals that the E is 97.37.5 GPa as determined by optical interferometry and 109.413.5 GPa as established through the nano-indentation method. Additionally, optothermal Raman spectroscopy reveals that γ-GeSe has a lattice thermal conductivity of 2.3 0.4 Wm−1K−1 and a total thermal conductivity of 7.5 0.4 Wm−1K−1 in the in-plane direction at room temperature. The notably high ratio in γ-GeSe, compared to other layered materials, underscores its distinctive structural and dynamic characteristics.
Original language | English |
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Article number | 29 |
Journal | Nano Convergence |
Volume | 11 |
Issue number | 1 |
DOIs | |
State | Published - Dec 2024 |
Bibliographical note
Publisher Copyright:© The Author(s) 2024.
Keywords
- Freestanding structure
- Group-IV Monochalcogenide
- Thermal conductivity
- Young’s modulus
- γ-GeSe