Unusually high-performing organic field-effect transistors based on π-extended semiconducting porphyrins

Mai Ha Hoang; Youngmee Kim; Minsik Kim; Kyung Hwan Kim; Tae Wan Lee; Duc Nghia Nguyen; Sung Jin Kim; Kwangyeol Lee; Suk Joong Lee; Dong Hoon Choi

doi:10.1002/adma.201202148

Unusually high-performing organic field-effect transistors based on π-extended semiconducting porphyrins

Mai Ha Hoang
, Youngmee Kim
, Minsik Kim
, Kyung Hwan Kim
, Tae Wan Lee
, Duc Nghia Nguyen
, Sung Jin Kim
, Kwangyeol Lee
, Suk Joong Lee
, Dong Hoon Choi

Department of Chemistry & Nanoscience

Research output: Contribution to journal › Article › peer-review

72 Scopus citations

Abstract

Highly conjugated porphyrin derivatives, H₂TP and ZnTP, are synthesized. J-aggregations of the H-aggregated dimeric porphyrin pairs are clearly observed by their single crystal structures that facilitate slip-stacked charge transport phenomenon. In particular, their SC-FETs show the highest field-effect mobilities of 0.85-2.90 cm² V^-1s ^-1. Furthermore, the ZnTP-based OPT displays a dramatic photoinduced current enhancement with a high photoresponsivity of 22 000 A W^-1 under a very low light intensity (5.6 m W cm^-2).

Original language	English
Pages (from-to)	5363-5367
Number of pages	5
Journal	Advanced Materials
Volume	24
Issue number	39
DOIs	https://doi.org/10.1002/adma.201202148
State	Published - 9 Oct 2012

Keywords

field effect transistors
molecular aggregation
organic semiconductors
phototransistor
porphyrin
single crystals

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10.1002/adma.201202148

Cite this

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title = "Unusually high-performing organic field-effect transistors based on π-extended semiconducting porphyrins",

abstract = "Highly conjugated porphyrin derivatives, H2TP and ZnTP, are synthesized. J-aggregations of the H-aggregated dimeric porphyrin pairs are clearly observed by their single crystal structures that facilitate slip-stacked charge transport phenomenon. In particular, their SC-FETs show the highest field-effect mobilities of 0.85-2.90 cm2 V-1s -1. Furthermore, the ZnTP-based OPT displays a dramatic photoinduced current enhancement with a high photoresponsivity of 22 000 A W-1 under a very low light intensity (5.6 m W cm-2).",

keywords = "field effect transistors, molecular aggregation, organic semiconductors, phototransistor, porphyrin, single crystals",

author = "Hoang, \{Mai Ha\} and Youngmee Kim and Minsik Kim and Kim, \{Kyung Hwan\} and Lee, \{Tae Wan\} and Nguyen, \{Duc Nghia\} and Kim, \{Sung Jin\} and Kwangyeol Lee and Lee, \{Suk Joong\} and Choi, \{Dong Hoon\}",

year = "2012",

month = oct,

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doi = "10.1002/adma.201202148",

language = "English",

volume = "24",

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journal = "Advanced Materials",

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TY - JOUR

T1 - Unusually high-performing organic field-effect transistors based on π-extended semiconducting porphyrins

AU - Hoang, Mai Ha

AU - Kim, Youngmee

AU - Kim, Minsik

AU - Kim, Kyung Hwan

AU - Lee, Tae Wan

AU - Nguyen, Duc Nghia

AU - Kim, Sung Jin

AU - Lee, Kwangyeol

AU - Lee, Suk Joong

AU - Choi, Dong Hoon

PY - 2012/10/9

Y1 - 2012/10/9

N2 - Highly conjugated porphyrin derivatives, H2TP and ZnTP, are synthesized. J-aggregations of the H-aggregated dimeric porphyrin pairs are clearly observed by their single crystal structures that facilitate slip-stacked charge transport phenomenon. In particular, their SC-FETs show the highest field-effect mobilities of 0.85-2.90 cm2 V-1s -1. Furthermore, the ZnTP-based OPT displays a dramatic photoinduced current enhancement with a high photoresponsivity of 22 000 A W-1 under a very low light intensity (5.6 m W cm-2).

AB - Highly conjugated porphyrin derivatives, H2TP and ZnTP, are synthesized. J-aggregations of the H-aggregated dimeric porphyrin pairs are clearly observed by their single crystal structures that facilitate slip-stacked charge transport phenomenon. In particular, their SC-FETs show the highest field-effect mobilities of 0.85-2.90 cm2 V-1s -1. Furthermore, the ZnTP-based OPT displays a dramatic photoinduced current enhancement with a high photoresponsivity of 22 000 A W-1 under a very low light intensity (5.6 m W cm-2).

KW - field effect transistors

KW - molecular aggregation

KW - organic semiconductors

KW - phototransistor

KW - porphyrin

KW - single crystals

UR - https://www.scopus.com/pages/publications/84866998957

U2 - 10.1002/adma.201202148

DO - 10.1002/adma.201202148

M3 - Article

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AN - SCOPUS:84866998957

SN - 0935-9648

VL - 24

SP - 5363

EP - 5367

JO - Advanced Materials

JF - Advanced Materials

IS - 39

ER -

Unusually high-performing organic field-effect transistors based on π-extended semiconducting porphyrins

Abstract

Keywords

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