Uniformity Improvement of SiNx-Based Resistive Switching Memory by Suppressed Internal Overshoot Current

Min Hwi Kim, Sungjun Kim, Suhyun Bang, Tae Hyeon Kim, Dong Keun Lee, Seongjae Cho, Byung Gook Park

Research output: Contribution to journalArticlepeer-review

20 Scopus citations

Abstract

In this paper, we have investigated the effect of additional thin SiO2 layer on switching variability of SiNx-based resistive memory (RRAM). We found that excessive LRS state generated in set operation results in large reset current and abrupt reset operation. The abrupt reset operation leads to large distribution of HRS. To investigate the transient characteristics of switching procedure in detail, measurement environment was implemented with equivalent circuit, and measured current from equipment was separated into capacitive and resistive current of resistive memory cell. Consequently, we point the internal overshoot current occurring in set operation as the cause of the excessive leaky state leading to large resistance distributions. Finally, we confirm the effect of low resistance state value (RLRS) and cell capacitance (CDUT) on the internal overshoot current of RRAM.

Original languageEnglish
Pages (from-to)824-828
Number of pages5
JournalIEEE Transactions on Nanotechnology
Volume17
Issue number4
DOIs
StatePublished - Jul 2018

Bibliographical note

Funding Information:
Manuscript received April 18, 2018; accepted May 24, 2018. Date of publication May 30, 2018; date of current version July 9, 2018. This work was supported in part by the National Research Foundation of Korea funded by the Korea government (MSIP) under Grant 2018R1A2A1A05023517 and in part by the Brain Korea 21 Plus Project. The review of this paper was arranged by Associate Editor S. Mohanty. (Corresponding author: Byung-Gook Park.) M.-H. Kim, S. Bang, T.-H. Kim, D. K. Lee, and B.-G. Park are with the InterUniversity Semiconductor Research Center and the Department of Electrical and Computer Engineering, Seoul National University, Seoul 08826, South Korea (e-mail:, goldmand@snu.ac.kr; sc1010@snu.ac.kr; taehyun4902@snu.ac.kr; dklee1991@snu.ac.kr; bgpark@snu.ac.kr).

Publisher Copyright:
© 2018 IEEE.

Keywords

  • RRAM
  • internal overshoot current
  • uniformity

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