In this work, we have investigated the effect of thin SiO2 layer on switching variability of SiNx-based RRAM. We found that recessive LRS state generated in set operation results in large reset current and abrupt reset operation. The abrupt reset operation leads to large HRS distribution. To investigate the transient characteristics of switching process in detail, measurement environment is implemented with equivalent circuit and measured current from equipment is separated to capacitive and resistive current element. Consequently, we point the internal overshoot current occurred in set operation as the cause of switching variability and large distribution.
|Title of host publication||2017 Silicon Nanoelectronics Workshop, SNW 2017|
|Publisher||Institute of Electrical and Electronics Engineers Inc.|
|Number of pages||2|
|State||Published - 29 Dec 2017|
|Event||22nd Silicon Nanoelectronics Workshop, SNW 2017 - Kyoto, Japan|
Duration: 4 Jun 2017 → 5 Jun 2017
|Name||2017 Silicon Nanoelectronics Workshop, SNW 2017|
|Conference||22nd Silicon Nanoelectronics Workshop, SNW 2017|
|Period||4/06/17 → 5/06/17|
Bibliographical noteFunding Information:
This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIP) (2015RIA2AIAOlO07307).
© 2017 JSAP.