Uniformity improvement of SiNjc-based resistive switching memory by suppressed internal overshoot current

Min Hwi Kim; Sungjun Kim; Suhyun Bang; Tae Hyeon Kim; Dong Keun Lee; Seongjae Cho; Jong Ho Lee; Byung Gook Park

doi:10.23919/SNW.2017.8242276

Uniformity improvement of SiNjc-based resistive switching memory by suppressed internal overshoot current

Min Hwi Kim, Sungjun Kim, Suhyun Bang, Tae Hyeon Kim, Dong Keun Lee, Seongjae Cho, Jong Ho Lee, Byung Gook Park

Electronic and Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this work, we have investigated the effect of thin SiO₂ layer on switching variability of SiNx-based RRAM. We found that recessive LRS state generated in set operation results in large reset current and abrupt reset operation. The abrupt reset operation leads to large HRS distribution. To investigate the transient characteristics of switching process in detail, measurement environment is implemented with equivalent circuit and measured current from equipment is separated to capacitive and resistive current element. Consequently, we point the internal overshoot current occurred in set operation as the cause of switching variability and large distribution.

Original language	English
Title of host publication	2017 Silicon Nanoelectronics Workshop, SNW 2017
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	19-20
Number of pages	2
ISBN (Electronic)	9784863486478
DOIs	https://doi.org/10.23919/SNW.2017.8242276
State	Published - 29 Dec 2017
Event	22nd Silicon Nanoelectronics Workshop, SNW 2017 - Kyoto, Japan Duration: 4 Jun 2017 → 5 Jun 2017

Publication series

Name	2017 Silicon Nanoelectronics Workshop, SNW 2017
Volume	2017-January

Conference

Conference	22nd Silicon Nanoelectronics Workshop, SNW 2017
Country/Territory	Japan
City	Kyoto
Period	4/06/17 → 5/06/17

Bibliographical note

Funding Information:
This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIP) (2015RIA2AIAOlO07307).

Publisher Copyright:
© 2017 JSAP.

Access to Document

10.23919/SNW.2017.8242276

Cite this

Kim, M. H., Kim, S., Bang, S., Kim, T. H., Lee, D. K., Cho, S., Lee, J. H., & Park, B. G. (2017). Uniformity improvement of SiNjc-based resistive switching memory by suppressed internal overshoot current. In 2017 Silicon Nanoelectronics Workshop, SNW 2017 (pp. 19-20). Article 8242276 (2017 Silicon Nanoelectronics Workshop, SNW 2017; Vol. 2017-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/SNW.2017.8242276

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title = "Uniformity improvement of SiNjc-based resistive switching memory by suppressed internal overshoot current",

abstract = "In this work, we have investigated the effect of thin SiO2 layer on switching variability of SiNx-based RRAM. We found that recessive LRS state generated in set operation results in large reset current and abrupt reset operation. The abrupt reset operation leads to large HRS distribution. To investigate the transient characteristics of switching process in detail, measurement environment is implemented with equivalent circuit and measured current from equipment is separated to capacitive and resistive current element. Consequently, we point the internal overshoot current occurred in set operation as the cause of switching variability and large distribution.",

author = "Kim, {Min Hwi} and Sungjun Kim and Suhyun Bang and Kim, {Tae Hyeon} and Lee, {Dong Keun} and Seongjae Cho and Lee, {Jong Ho} and Park, {Byung Gook}",

note = "Funding Information: This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIP) (2015RIA2AIAOlO07307). Publisher Copyright: {\textcopyright} 2017 JSAP.; 22nd Silicon Nanoelectronics Workshop, SNW 2017 ; Conference date: 04-06-2017 Through 05-06-2017",

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day = "29",

doi = "10.23919/SNW.2017.8242276",

language = "English",

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Kim, MH, Kim, S, Bang, S, Kim, TH, Lee, DK, Cho, S, Lee, JH & Park, BG 2017, Uniformity improvement of SiNjc-based resistive switching memory by suppressed internal overshoot current. in 2017 Silicon Nanoelectronics Workshop, SNW 2017., 8242276, 2017 Silicon Nanoelectronics Workshop, SNW 2017, vol. 2017-January, Institute of Electrical and Electronics Engineers Inc., pp. 19-20, 22nd Silicon Nanoelectronics Workshop, SNW 2017, Kyoto, Japan, 4/06/17. https://doi.org/10.23919/SNW.2017.8242276

Uniformity improvement of SiNjc-based resistive switching memory by suppressed internal overshoot current. / Kim, Min Hwi; Kim, Sungjun; Bang, Suhyun et al.
2017 Silicon Nanoelectronics Workshop, SNW 2017. Institute of Electrical and Electronics Engineers Inc., 2017. p. 19-20 8242276 (2017 Silicon Nanoelectronics Workshop, SNW 2017; Vol. 2017-January).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Uniformity improvement of SiNjc-based resistive switching memory by suppressed internal overshoot current

AU - Kim, Min Hwi

AU - Kim, Sungjun

AU - Bang, Suhyun

AU - Kim, Tae Hyeon

AU - Lee, Dong Keun

AU - Cho, Seongjae

AU - Lee, Jong Ho

AU - Park, Byung Gook

N1 - Funding Information: This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIP) (2015RIA2AIAOlO07307). Publisher Copyright: © 2017 JSAP.

PY - 2017/12/29

Y1 - 2017/12/29

N2 - In this work, we have investigated the effect of thin SiO2 layer on switching variability of SiNx-based RRAM. We found that recessive LRS state generated in set operation results in large reset current and abrupt reset operation. The abrupt reset operation leads to large HRS distribution. To investigate the transient characteristics of switching process in detail, measurement environment is implemented with equivalent circuit and measured current from equipment is separated to capacitive and resistive current element. Consequently, we point the internal overshoot current occurred in set operation as the cause of switching variability and large distribution.

AB - In this work, we have investigated the effect of thin SiO2 layer on switching variability of SiNx-based RRAM. We found that recessive LRS state generated in set operation results in large reset current and abrupt reset operation. The abrupt reset operation leads to large HRS distribution. To investigate the transient characteristics of switching process in detail, measurement environment is implemented with equivalent circuit and measured current from equipment is separated to capacitive and resistive current element. Consequently, we point the internal overshoot current occurred in set operation as the cause of switching variability and large distribution.

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T3 - 2017 Silicon Nanoelectronics Workshop, SNW 2017

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BT - 2017 Silicon Nanoelectronics Workshop, SNW 2017

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Kim MH, Kim S, Bang S, Kim TH, Lee DK, Cho S et al. Uniformity improvement of SiNjc-based resistive switching memory by suppressed internal overshoot current. In 2017 Silicon Nanoelectronics Workshop, SNW 2017. Institute of Electrical and Electronics Engineers Inc. 2017. p. 19-20. 8242276. (2017 Silicon Nanoelectronics Workshop, SNW 2017). doi: 10.23919/SNW.2017.8242276

Uniformity improvement of SiNjc-based resistive switching memory by suppressed internal overshoot current

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