Unified model for junction size, substrate doping, and energy dependence of α-particle-induced charge collection

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Abstract

A model for the α-particle-induced charge collection has been developed. By accounting for the funnelling and diffusion charges separately, our model accurately describes the junction size dependence of collected charge for a wide range of junction sizes, substrate doping levels, and α-particle energies.

Original languageEnglish
Pages (from-to)1880-1882
Number of pages3
JournalElectronics Letters
Volume32
Issue number20
DOIs
StatePublished - 1996

Keywords

  • DRAMm chips
  • Radiation effects

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