Abstract
The switching time of the magnetic tunnel junction for spin-transfer torque magnetoresistive random access memory is investigated as a function of the current. We present a unified analytical model for switching time so that the problem of discontinuity around the critical current is solved. The suggested unified model shows excellent agreement with the experimental data of parallel/antiparallel states simultaneously. Furthermore, only one set of parameters is used to represent all switching regime in our model.
| Original language | English |
|---|---|
| Article number | 6681876 |
| Pages (from-to) | 193-195 |
| Number of pages | 3 |
| Journal | IEEE Electron Device Letters |
| Volume | 35 |
| Issue number | 2 |
| DOIs | |
| State | Published - Feb 2014 |
Keywords
- Magnetic tunnel junction (MTJ)
- magnetoresistive random access memory (MRAM)
- spin-transfer torque (STT)
- switching time