Unified analytical model for switching behavior of magnetic tunnel junction

Hyein Lim, Seungjun Lee, Hyungsoon Shin

Research output: Contribution to journalArticlepeer-review

15 Scopus citations


The switching time of the magnetic tunnel junction for spin-transfer torque magnetoresistive random access memory is investigated as a function of the current. We present a unified analytical model for switching time so that the problem of discontinuity around the critical current is solved. The suggested unified model shows excellent agreement with the experimental data of parallel/antiparallel states simultaneously. Furthermore, only one set of parameters is used to represent all switching regime in our model.

Original languageEnglish
Article number6681876
Pages (from-to)193-195
Number of pages3
JournalIEEE Electron Device Letters
Issue number2
StatePublished - Feb 2014


  • Magnetic tunnel junction (MTJ)
  • magnetoresistive random access memory (MRAM)
  • spin-transfer torque (STT)
  • switching time


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