Ultrafast Negative Capacitance Transition for 2D Ferroelectric MoS2/Graphene Transistor

Debottam Daw, Houcine Bouzid, Moonyoung Jung, Dongseok Suh, Chandan Biswas, Young Hee Lee

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

Negative capacitance gives rise to subthreshold swing (SS) below the fundamental limit by efficient modulation of surface potential in transistors. While negative-capacitance transition is reported in polycrystalline Pb(Zr0.2Ti0.8)O3 (PZT) and HfZrO2 (HZO) thin-films in few microseconds timescale, low SS is not persistent over a wide range of drain current when used instead of conventional dielectrics. In this work, the clear nano-second negative transition states in 2D single-crystal CuInP2S6 (CIPS) flakes have been demonstrated by an alternative fast-transient measurement technique. Further, integrating this ultrafast NC transition with the localized density of states of Dirac contacts and controlled charge transfer in the CIPS/channel (MoS2/graphene) a state-of-the-art device architecture, negative capacitance Dirac source drain field effect transistor (FET) is introduced. This yields an ultralow SS of 4.8 mV dec−1 with an average sub-10 SS across five decades with on-off ratio exceeding 107, by simultaneous improvement of transport and body factors in monolayer MoS2-based FET, outperforming all previous reports. This approach could pave the way to achieve ultralow-SS FETs for future high-speed and low-power electronics.

Original languageEnglish
Article number2304338
JournalAdvanced Materials
Volume36
Issue number13
DOIs
StatePublished - 28 Mar 2024

Bibliographical note

Publisher Copyright:
© 2024 Wiley-VCH GmbH.

Keywords

  • Dirac source
  • negative capacitance
  • subthreshold-swing
  • transient measurements
  • van der Waals ferroelectrics

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