Ultrafast carrier dynamics in BiVO4: Interplay between free carriers, trapped carriers and low-frequency lattice vibrations

Benjamin J. Dringoli, Keith T. Butler, Lite Zhou, Binod Giri, Pratap M. Rao, A. Walsh, Lyubov V. Titova

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

BiVO4 is a promising material for solar energy conversion applications. However, it suffers from low mobility due to strong carrier-phonon coupling, which favors formation of polarons. To elucidate carrier transport mechanisms in BiVO4, we apply time-resolved THz spectroscopy to probe dynamics of photexcited carriers and their coupling to lattice vibrational modes at early times (1-20 ps) after photoexcitation. We find that at high excitation fluences, trap states are saturated and a short-lived population of highly mobile residual carriers exists. At the same time, saturation of hole trap states manifests itself in changes in the low-frequency (1.92 THz) seesaw phonon mode between the Bi and VO4 units.

Original languageEnglish
Title of host publication41st International Conference on Infrared, Millimeter and Terahertz Waves, IRMMW-THz 2016
PublisherIEEE Computer Society
ISBN (Electronic)9781467384858
DOIs
StatePublished - 28 Nov 2016
Event41st International Conference on Infrared, Millimeter and Terahertz Waves, IRMMW-THz 2016 - Copenhagen, Denmark
Duration: 25 Sep 201630 Sep 2016

Publication series

NameInternational Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz
Volume2016-November
ISSN (Print)2162-2027
ISSN (Electronic)2162-2035

Conference

Conference41st International Conference on Infrared, Millimeter and Terahertz Waves, IRMMW-THz 2016
Country/TerritoryDenmark
CityCopenhagen
Period25/09/1630/09/16

Bibliographical note

Publisher Copyright:
© 2016 IEEE.

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