Ultra-violet resonant Raman scattering studies of dilute GaPN alloys

S. Yoon

doi:10.3938/jkps.55.1563

Ultra-violet resonant Raman scattering studies of dilute GaPN alloys

S. Yoon

Department of Physics

Research output: Contribution to journal › Article › peer-review

Abstract

We report a resonant Raman scattering study of GaP_1-xN _x in the ultraviolet spectral range. A strong intensity resonance near the E₁ transition energy exhibiting a zone-center longitudinal optical phonon provides evidence that the L-point conduction band edge of GaP_1-xN_x is strongly perturbed by nitrogen isoelectronic impurities and slowly moves up in energy with increasing nitrogen concentration. This result, combined with results of previous studies, strongly suggests that GaP_1-xN_x is best described as an impurity band system.

Original language	English
Pages (from-to)	1563-1567
Number of pages	5
Journal	Journal of the Korean Physical Society
Volume	55
Issue number	4
DOIs	https://doi.org/10.3938/jkps.55.1563
State	Published - Oct 2009

Keywords

Dilute nitride
Localized impurity states
Resonant Raman scattering

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10.3938/jkps.55.1563

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title = "Ultra-violet resonant Raman scattering studies of dilute GaPN alloys",

abstract = "We report a resonant Raman scattering study of GaP1-xN x in the ultraviolet spectral range. A strong intensity resonance near the E1 transition energy exhibiting a zone-center longitudinal optical phonon provides evidence that the L-point conduction band edge of GaP1-xNx is strongly perturbed by nitrogen isoelectronic impurities and slowly moves up in energy with increasing nitrogen concentration. This result, combined with results of previous studies, strongly suggests that GaP1-xNx is best described as an impurity band system.",

keywords = "Dilute nitride, Localized impurity states, Resonant Raman scattering",

author = "S. Yoon",

year = "2009",

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AU - Yoon, S.

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N2 - We report a resonant Raman scattering study of GaP1-xN x in the ultraviolet spectral range. A strong intensity resonance near the E1 transition energy exhibiting a zone-center longitudinal optical phonon provides evidence that the L-point conduction band edge of GaP1-xNx is strongly perturbed by nitrogen isoelectronic impurities and slowly moves up in energy with increasing nitrogen concentration. This result, combined with results of previous studies, strongly suggests that GaP1-xNx is best described as an impurity band system.

AB - We report a resonant Raman scattering study of GaP1-xN x in the ultraviolet spectral range. A strong intensity resonance near the E1 transition energy exhibiting a zone-center longitudinal optical phonon provides evidence that the L-point conduction band edge of GaP1-xNx is strongly perturbed by nitrogen isoelectronic impurities and slowly moves up in energy with increasing nitrogen concentration. This result, combined with results of previous studies, strongly suggests that GaP1-xNx is best described as an impurity band system.

KW - Dilute nitride

KW - Localized impurity states

KW - Resonant Raman scattering

UR - https://www.scopus.com/pages/publications/72149130566

U2 - 10.3938/jkps.55.1563

DO - 10.3938/jkps.55.1563

M3 - Article

AN - SCOPUS:72149130566

SN - 0374-4884

VL - 55

SP - 1563

EP - 1567

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - 4

ER -

Ultra-violet resonant Raman scattering studies of dilute GaPN alloys

Abstract

Keywords

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