Ultra-violet resonant Raman scattering studies of dilute GaPN alloys

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We report a resonant Raman scattering study of GaP1-xN x in the ultraviolet spectral range. A strong intensity resonance near the E1 transition energy exhibiting a zone-center longitudinal optical phonon provides evidence that the L-point conduction band edge of GaP1-xNx is strongly perturbed by nitrogen isoelectronic impurities and slowly moves up in energy with increasing nitrogen concentration. This result, combined with results of previous studies, strongly suggests that GaP1-xNx is best described as an impurity band system.

Original languageEnglish
Pages (from-to)1563-1567
Number of pages5
JournalJournal of the Korean Physical Society
Issue number4
StatePublished - Oct 2009


  • Dilute nitride
  • Localized impurity states
  • Resonant Raman scattering


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