Two series oxide resistors applicable to high speed and high density nonvolatile memory

Advanced nonvolatile memory consisting of two series oxide resistors, where the former is a memory element storing data by utilizing bi-stable resistance switching and the later was a switch element controlling access using the related threshold switching. Nonvolatile memory consisted of a memory element with bi-stable states under zero bias and a switch element with resistance controlled by external bias. The memory element stores the information and the switch element controls access to a specific memory element. The main advantages presented for this type of memory structure were found to be extremely fast programming speed of several tens of nano-seconds due to the fast resistance switching behaviors and low processing temperature below 300°C compatible to three-dimensional stack structures.