Two series oxide resistors applicable to high speed and high density nonvolatile memory

Myoung Jae Lee, Youngsoo Park, Dong Seok Suh, Eun Hong Lee, Sunae Seo, Dong Chirl Kim, Ranju Jung, Bo Soo Kang, Seung Eon Ahn, Chang Bum Lee, David H. Seo, Young Kwan Cha, In Kyeong Yoo, Jin Soo Kim, Bae Ho Park

Research output: Contribution to journalArticlepeer-review

414 Scopus citations

Abstract

Advanced nonvolatile memory consisting of two series oxide resistors, where the former is a memory element storing data by utilizing bi-stable resistance switching and the later was a switch element controlling access using the related threshold switching. Nonvolatile memory consisted of a memory element with bi-stable states under zero bias and a switch element with resistance controlled by external bias. The memory element stores the information and the switch element controls access to a specific memory element. The main advantages presented for this type of memory structure were found to be extremely fast programming speed of several tens of nano-seconds due to the fast resistance switching behaviors and low processing temperature below 300°C compatible to three-dimensional stack structures.

Original languageEnglish
Pages (from-to)3919-3923
Number of pages5
JournalAdvanced Materials
Volume19
Issue number22
DOIs
StatePublished - 19 Nov 2007

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