Two series oxide resistors applicable to high speed and high density nonvolatile memory

Myoung Jae Lee; Youngsoo Park; Dong Seok Suh; Eun Hong Lee; Sunae Seo; Dong Chirl Kim; Ranju Jung; Bo Soo Kang; Seung Eon Ahn; Chang Bum Lee; David H. Seo; Young Kwan Cha; In Kyeong Yoo; Jin Soo Kim; Bae Ho Park

doi:10.1002/adma.200700251

Two series oxide resistors applicable to high speed and high density nonvolatile memory

Myoung Jae Lee, Youngsoo Park, Dong Seok Suh, Eun Hong Lee, Sunae Seo, Dong Chirl Kim, Ranju Jung, Bo Soo Kang, Seung Eon Ahn, Chang Bum Lee, David H. Seo, Young Kwan Cha, In Kyeong Yoo, Jin Soo Kim, Bae Ho Park

Department of Physics

Research output: Contribution to journal › Article › peer-review

421 Scopus citations

Abstract

Advanced nonvolatile memory consisting of two series oxide resistors, where the former is a memory element storing data by utilizing bi-stable resistance switching and the later was a switch element controlling access using the related threshold switching. Nonvolatile memory consisted of a memory element with bi-stable states under zero bias and a switch element with resistance controlled by external bias. The memory element stores the information and the switch element controls access to a specific memory element. The main advantages presented for this type of memory structure were found to be extremely fast programming speed of several tens of nano-seconds due to the fast resistance switching behaviors and low processing temperature below 300°C compatible to three-dimensional stack structures.

Original language	English
Pages (from-to)	3919-3923
Number of pages	5
Journal	Advanced Materials
Volume	19
Issue number	22
DOIs	https://doi.org/10.1002/adma.200700251
State	Published - 19 Nov 2007

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title = "Two series oxide resistors applicable to high speed and high density nonvolatile memory",

abstract = "Advanced nonvolatile memory consisting of two series oxide resistors, where the former is a memory element storing data by utilizing bi-stable resistance switching and the later was a switch element controlling access using the related threshold switching. Nonvolatile memory consisted of a memory element with bi-stable states under zero bias and a switch element with resistance controlled by external bias. The memory element stores the information and the switch element controls access to a specific memory element. The main advantages presented for this type of memory structure were found to be extremely fast programming speed of several tens of nano-seconds due to the fast resistance switching behaviors and low processing temperature below 300°C compatible to three-dimensional stack structures.",

author = "Lee, {Myoung Jae} and Youngsoo Park and Suh, {Dong Seok} and Lee, {Eun Hong} and Sunae Seo and Kim, {Dong Chirl} and Ranju Jung and Kang, {Bo Soo} and Ahn, {Seung Eon} and Lee, {Chang Bum} and Seo, {David H.} and Cha, {Young Kwan} and Yoo, {In Kyeong} and Kim, {Jin Soo} and Park, {Bae Ho}",

year = "2007",

month = nov,

day = "19",

doi = "10.1002/adma.200700251",

language = "English",

volume = "19",

pages = "3919--3923",

journal = "Advanced Materials",

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TY - JOUR

T1 - Two series oxide resistors applicable to high speed and high density nonvolatile memory

AU - Lee, Myoung Jae

AU - Park, Youngsoo

AU - Suh, Dong Seok

AU - Lee, Eun Hong

AU - Seo, Sunae

AU - Kim, Dong Chirl

AU - Jung, Ranju

AU - Kang, Bo Soo

AU - Ahn, Seung Eon

AU - Lee, Chang Bum

AU - Seo, David H.

AU - Cha, Young Kwan

AU - Yoo, In Kyeong

AU - Kim, Jin Soo

AU - Park, Bae Ho

PY - 2007/11/19

Y1 - 2007/11/19

N2 - Advanced nonvolatile memory consisting of two series oxide resistors, where the former is a memory element storing data by utilizing bi-stable resistance switching and the later was a switch element controlling access using the related threshold switching. Nonvolatile memory consisted of a memory element with bi-stable states under zero bias and a switch element with resistance controlled by external bias. The memory element stores the information and the switch element controls access to a specific memory element. The main advantages presented for this type of memory structure were found to be extremely fast programming speed of several tens of nano-seconds due to the fast resistance switching behaviors and low processing temperature below 300°C compatible to three-dimensional stack structures.

AB - Advanced nonvolatile memory consisting of two series oxide resistors, where the former is a memory element storing data by utilizing bi-stable resistance switching and the later was a switch element controlling access using the related threshold switching. Nonvolatile memory consisted of a memory element with bi-stable states under zero bias and a switch element with resistance controlled by external bias. The memory element stores the information and the switch element controls access to a specific memory element. The main advantages presented for this type of memory structure were found to be extremely fast programming speed of several tens of nano-seconds due to the fast resistance switching behaviors and low processing temperature below 300°C compatible to three-dimensional stack structures.

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JO - Advanced Materials

JF - Advanced Materials

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ER -

Two series oxide resistors applicable to high speed and high density nonvolatile memory

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