TY - JOUR
T1 - Tunneling spectroscopy of ultrathin insulating Cu 2N films, and single Co adatoms
AU - Choi, T.
AU - Ruggiero, C. D.
AU - Gupta, J. A.
N1 - Funding Information:
The authors thank A. J. Heinrich, C. F. Hirjibehedin, and A. F. Otte for helpful discussions concerning their recent results. They are grateful for support from NSF CAREER DMR-0645451.
PY - 2009
Y1 - 2009
N2 - Scanning tunneling microscopy is used to characterize the electronic structure of 1 ML films of c (2×2) NCu (100) (i.e., Cu2 N). By varying nitrogen coverage, a variety of morphologies are prepared, including (1) isolated ∼25 nm2 islands, (2) close-packed arrays of islands, and (3) quasicontinuous monolayer films. In all three regimes, the authors find that Cu2 N acts as an insulator, with a band gap that exceeds 4 eV. The insulating Cu2 N films are used to control the coupling of adsorbed Co atoms to the Cu(100) surface electron density. Tunneling spectroscopy of Co on Cu2 N reveals an unoccupied atomic resonance, Kondo effect, and spin-flip excitation. These features depend on binding site within the Cu2 N film, and are distinctly different than corresponding spectra for Co on Cu(100).
AB - Scanning tunneling microscopy is used to characterize the electronic structure of 1 ML films of c (2×2) NCu (100) (i.e., Cu2 N). By varying nitrogen coverage, a variety of morphologies are prepared, including (1) isolated ∼25 nm2 islands, (2) close-packed arrays of islands, and (3) quasicontinuous monolayer films. In all three regimes, the authors find that Cu2 N acts as an insulator, with a band gap that exceeds 4 eV. The insulating Cu2 N films are used to control the coupling of adsorbed Co atoms to the Cu(100) surface electron density. Tunneling spectroscopy of Co on Cu2 N reveals an unoccupied atomic resonance, Kondo effect, and spin-flip excitation. These features depend on binding site within the Cu2 N film, and are distinctly different than corresponding spectra for Co on Cu(100).
UR - http://www.scopus.com/inward/record.url?scp=64549103043&partnerID=8YFLogxK
U2 - 10.1116/1.3010720
DO - 10.1116/1.3010720
M3 - Article
AN - SCOPUS:64549103043
SN - 1071-1023
VL - 27
SP - 887
EP - 890
JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
IS - 2
ER -