Three-dimensional simulation of discrete oxide charge effects in 0.1 μm MOSFETs

Choong Ryul Ryou, Sung Woo Hwang, Hyungsoon Shin, Chan Ho Lee, Young June Park, Hong Shick Min

Research output: Contribution to journalArticlepeer-review

3 Scopus citations


The threshold voltage fluctuation caused by random distribution of discrete oxide charges is studied using three-dimensional (3D) simulations. It is found that the effect of discrete oxide charges on the terminal current variation depends on their lateral positions in the channel and, for the same number fluctuations of discrete charges, a large threshold voltage fluctuation is introduced in a device with deeper source/drain junction depth (Xj). The effect of 3D current flow is found to give negligible effect on the threshold voltage fluctuation. Finally, the effects of oxide charges and dopants on the threshold voltage fluctuation are compared.

Original languageEnglish
Pages (from-to)1165-1172
Number of pages8
JournalSolid-State Electronics
Issue number7
StatePublished - Jul 2001

Bibliographical note

Funding Information:
This work was supported by the National Research Laboratory Project of the Ministry of Science and Technology and by a Collaborative Project for Excellence in Basic System IC Technology.


  • 3D simulation
  • Atomic simulation
  • Fluctuation
  • Oxide charge
  • Threshold voltage


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