Three-dimensional simulation of discrete oxide charge effects in 0.1 μm MOSFETs

Choong Ryul Ryou; Sung Woo Hwang; Hyungsoon Shin; Chan Ho Lee; Young June Park; Hong Shick Min

doi:10.1016/S0038-1101(01)00034-X

Three-dimensional simulation of discrete oxide charge effects in 0.1 μm MOSFETs

Choong Ryul Ryou, Sung Woo Hwang, Hyungsoon Shin, Chan Ho Lee, Young June Park, Hong Shick Min

Electronic and Electrical Engineering

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

The threshold voltage fluctuation caused by random distribution of discrete oxide charges is studied using three-dimensional (3D) simulations. It is found that the effect of discrete oxide charges on the terminal current variation depends on their lateral positions in the channel and, for the same number fluctuations of discrete charges, a large threshold voltage fluctuation is introduced in a device with deeper source/drain junction depth (X_j). The effect of 3D current flow is found to give negligible effect on the threshold voltage fluctuation. Finally, the effects of oxide charges and dopants on the threshold voltage fluctuation are compared.

Original language	English
Pages (from-to)	1165-1172
Number of pages	8
Journal	Solid-State Electronics
Volume	45
Issue number	7
DOIs	https://doi.org/10.1016/S0038-1101(01)00034-X
State	Published - Jul 2001

Keywords

3D simulation
Atomic simulation
Fluctuation
MOSFET
Oxide charge
Threshold voltage

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10.1016/S0038-1101(01)00034-X

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@article{69442432756e463e8df9a8b775c1af36,

title = "Three-dimensional simulation of discrete oxide charge effects in 0.1 μm MOSFETs",

abstract = "The threshold voltage fluctuation caused by random distribution of discrete oxide charges is studied using three-dimensional (3D) simulations. It is found that the effect of discrete oxide charges on the terminal current variation depends on their lateral positions in the channel and, for the same number fluctuations of discrete charges, a large threshold voltage fluctuation is introduced in a device with deeper source/drain junction depth (Xj). The effect of 3D current flow is found to give negligible effect on the threshold voltage fluctuation. Finally, the effects of oxide charges and dopants on the threshold voltage fluctuation are compared.",

keywords = "3D simulation, Atomic simulation, Fluctuation, MOSFET, Oxide charge, Threshold voltage",

author = "Ryou, {Choong Ryul} and Hwang, {Sung Woo} and Hyungsoon Shin and Lee, {Chan Ho} and Park, {Young June} and {Shick Min}, Hong",

note = "Funding Information: This work was supported by the National Research Laboratory Project of the Ministry of Science and Technology and by a Collaborative Project for Excellence in Basic System IC Technology. ",

year = "2001",

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doi = "10.1016/S0038-1101(01)00034-X",

language = "English",

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journal = "Solid-State Electronics",

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T1 - Three-dimensional simulation of discrete oxide charge effects in 0.1 μm MOSFETs

AU - Ryou, Choong Ryul

AU - Hwang, Sung Woo

AU - Shin, Hyungsoon

AU - Lee, Chan Ho

AU - Park, Young June

AU - Shick Min, Hong

N1 - Funding Information: This work was supported by the National Research Laboratory Project of the Ministry of Science and Technology and by a Collaborative Project for Excellence in Basic System IC Technology.

PY - 2001/7

Y1 - 2001/7

N2 - The threshold voltage fluctuation caused by random distribution of discrete oxide charges is studied using three-dimensional (3D) simulations. It is found that the effect of discrete oxide charges on the terminal current variation depends on their lateral positions in the channel and, for the same number fluctuations of discrete charges, a large threshold voltage fluctuation is introduced in a device with deeper source/drain junction depth (Xj). The effect of 3D current flow is found to give negligible effect on the threshold voltage fluctuation. Finally, the effects of oxide charges and dopants on the threshold voltage fluctuation are compared.

AB - The threshold voltage fluctuation caused by random distribution of discrete oxide charges is studied using three-dimensional (3D) simulations. It is found that the effect of discrete oxide charges on the terminal current variation depends on their lateral positions in the channel and, for the same number fluctuations of discrete charges, a large threshold voltage fluctuation is introduced in a device with deeper source/drain junction depth (Xj). The effect of 3D current flow is found to give negligible effect on the threshold voltage fluctuation. Finally, the effects of oxide charges and dopants on the threshold voltage fluctuation are compared.

KW - 3D simulation

KW - Atomic simulation

KW - Fluctuation

KW - MOSFET

KW - Oxide charge

KW - Threshold voltage

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U2 - 10.1016/S0038-1101(01)00034-X

DO - 10.1016/S0038-1101(01)00034-X

M3 - Article

AN - SCOPUS:0035390453

SN - 0038-1101

VL - 45

SP - 1165

EP - 1172

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 7

ER -

Three-dimensional simulation of discrete oxide charge effects in 0.1 μm MOSFETs

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Keywords

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