Thin film superconducting MgB2 grown by MBE without post-anneal

William Jo; Jeong Uk Huh; Tsuyoshi Ohnishi; Ann F. Marshall; Malcolm R. Beasley; Robert H. Hammond

Thin film superconducting MgB₂ grown by MBE without post-anneal

William Jo, Jeong Uk Huh, Tsuyoshi Ohnishi, Ann F. Marshall, Malcolm R. Beasley, Robert H. Hammond

Department of Physics

Research output: Contribution to journal › Conference article › peer-review

Abstract

We report the synthesis of superconducting MgB₂ thin films grown in-situ by molecular beam epitaxy (MBE). Mg-rich fluxes are deposited with B-flux by electron beam evaporation onto c- and r-plane sapphire substrates. Deposition temperature is varied between 260 ∼ 320°C. Base pressure of the MBE chamber is at low 10^-10 Torr, rising to 10^-8 Torr during deposition due mostly to the presence of hydrogen and nitrogen. As-grown MgB₂ films show superconducting transition at ∼ 34 K with ΔT_c < 1 K. The films on c-plane sapphire substrates exhibit c-axis oriented peaks of MgB₂, and full-width at half maximum of 3 degree in their rocking curves. Azimuthal phi-scan of the MgB₂(101) peak shows 12-fold symmetric peaks, which is confirmed by selected area diffraction pattern in transmission electron microscopy (TEM). Plan-view TEM shows hexagonal-shaped grain growth with grain size of about 400 Å.

Original language	English
Pages (from-to)	369-374
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	689
State	Published - 2002
Event	Materials for High-Temperature Superconductor Technologies - Boston, MA, United States Duration: 26 Nov 2001 → 29 Nov 2001

Cite this

@article{3a1a6905acf6495a8afe0a8535c09f3d,

title = "Thin film superconducting MgB2 grown by MBE without post-anneal",

abstract = "We report the synthesis of superconducting MgB2 thin films grown in-situ by molecular beam epitaxy (MBE). Mg-rich fluxes are deposited with B-flux by electron beam evaporation onto c- and r-plane sapphire substrates. Deposition temperature is varied between 260 ∼ 320°C. Base pressure of the MBE chamber is at low 10-10 Torr, rising to 10-8 Torr during deposition due mostly to the presence of hydrogen and nitrogen. As-grown MgB2 films show superconducting transition at ∼ 34 K with ΔTc < 1 K. The films on c-plane sapphire substrates exhibit c-axis oriented peaks of MgB2, and full-width at half maximum of 3 degree in their rocking curves. Azimuthal phi-scan of the MgB2(101) peak shows 12-fold symmetric peaks, which is confirmed by selected area diffraction pattern in transmission electron microscopy (TEM). Plan-view TEM shows hexagonal-shaped grain growth with grain size of about 400 {\AA}.",

author = "William Jo and Huh, {Jeong Uk} and Tsuyoshi Ohnishi and Marshall, {Ann F.} and Beasley, {Malcolm R.} and Hammond, {Robert H.}",

year = "2002",

language = "English",

volume = "689",

pages = "369--374",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Materials for High-Temperature Superconductor Technologies ; Conference date: 26-11-2001 Through 29-11-2001",

}

TY - JOUR

T1 - Thin film superconducting MgB2 grown by MBE without post-anneal

AU - Jo, William

AU - Huh, Jeong Uk

AU - Ohnishi, Tsuyoshi

AU - Marshall, Ann F.

AU - Beasley, Malcolm R.

AU - Hammond, Robert H.

PY - 2002

Y1 - 2002

N2 - We report the synthesis of superconducting MgB2 thin films grown in-situ by molecular beam epitaxy (MBE). Mg-rich fluxes are deposited with B-flux by electron beam evaporation onto c- and r-plane sapphire substrates. Deposition temperature is varied between 260 ∼ 320°C. Base pressure of the MBE chamber is at low 10-10 Torr, rising to 10-8 Torr during deposition due mostly to the presence of hydrogen and nitrogen. As-grown MgB2 films show superconducting transition at ∼ 34 K with ΔTc < 1 K. The films on c-plane sapphire substrates exhibit c-axis oriented peaks of MgB2, and full-width at half maximum of 3 degree in their rocking curves. Azimuthal phi-scan of the MgB2(101) peak shows 12-fold symmetric peaks, which is confirmed by selected area diffraction pattern in transmission electron microscopy (TEM). Plan-view TEM shows hexagonal-shaped grain growth with grain size of about 400 Å.

AB - We report the synthesis of superconducting MgB2 thin films grown in-situ by molecular beam epitaxy (MBE). Mg-rich fluxes are deposited with B-flux by electron beam evaporation onto c- and r-plane sapphire substrates. Deposition temperature is varied between 260 ∼ 320°C. Base pressure of the MBE chamber is at low 10-10 Torr, rising to 10-8 Torr during deposition due mostly to the presence of hydrogen and nitrogen. As-grown MgB2 films show superconducting transition at ∼ 34 K with ΔTc < 1 K. The films on c-plane sapphire substrates exhibit c-axis oriented peaks of MgB2, and full-width at half maximum of 3 degree in their rocking curves. Azimuthal phi-scan of the MgB2(101) peak shows 12-fold symmetric peaks, which is confirmed by selected area diffraction pattern in transmission electron microscopy (TEM). Plan-view TEM shows hexagonal-shaped grain growth with grain size of about 400 Å.

UR - http://www.scopus.com/inward/record.url?scp=0036352211&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0036352211

SN - 0272-9172

VL - 689

SP - 369

EP - 374

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Materials for High-Temperature Superconductor Technologies

Y2 - 26 November 2001 through 29 November 2001

ER -

Thin film superconducting MgB2 grown by MBE without post-anneal

Abstract

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Thin film superconducting MgB₂ grown by MBE without post-anneal