Thickness-dependent carrier mobility of ambipolar MoTe2: Interplay between interface trap and Coulomb scattering

Hyunjin Ji, Gwanmu Lee, Min Kyu Joo, Yoojoo Yun, Hojoon Yi, Ji Hoon Park, Dongseok Suh, Seong Chu Lim

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44 Scopus citations

Abstract

The correlation between the channel thickness and the carrier mobility is investigated by conducting static and low frequency (LF) noise characterization for ambipolar carriers in multilayer MoTe2 transistors. For channel thicknesses in the range of 5-15 nm, both the low-field carrier mobility and the Coulomb-scattering-limited carrier mobility (μC) are maximal at a thickness of ∼10 nm. For LF noise, the interplay of interface trap density (NST), which was minimal at ∼10 nm, and the interfacial Coulomb scattering parameter (αSC), which decreased up to 10 nm and saturated above 10 nm, explained the mobility (μC) peaked near 10 nm by the carrier fluctuation and charge distribution.

Original languageEnglish
Article number183501
JournalApplied Physics Letters
Volume110
Issue number18
DOIs
StatePublished - 1 May 2017

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© 2017 Author(s).

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