Thickness dependence of critical currents and depth profiling of transport properties in high rate in-situ grown YBa2Cu3O7-x films

W. Jo, T. Ohnishi, J. U. Huh, R. H. Hammond, M. R. Beasley

Research output: Contribution to journalConference articlepeer-review

10 Scopus citations

Abstract

YBa2Cu3O7-x (YBCO) films are grown by in-situ electron beam evaporation at high deposition rates (100 ∼ 350 Å/sec. The YBCO films are found to consist of two regions as a function of thickness: a region on the bottom with defect-free microstructure reflecting layer-by-layer growth and at the top a defected type reflecting island-growth. We suggested a new phase stability to explain this growth behavior, with Ba-Cu-O liquid fluxes. The films show critical current density greater than 2 MA/cm2 on crystal substrates. Depth profiling of the transport properties (critical current density and resistivity) has been performed by etching the layers, elucidating that it is the island-growth layer where high critical current density is being carried.

Original languageEnglish
Pages (from-to)2817-2820
Number of pages4
JournalIEEE Transactions on Applied Superconductivity
Volume13
Issue number2 III
DOIs
StatePublished - Jun 2003
Event2002 Applied Superconductivity Conference - Houston, TX, United States
Duration: 4 Aug 20029 Aug 2002

Keywords

  • Critical current
  • Depth profiling
  • High rate deposition
  • In-situ growth
  • Thickness dependence
  • YBaCuO films

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