TY - JOUR
T1 - Thermomechanical Manipulation of Electric Transport in MoTe2
AU - Kim, Dohyun
AU - Lee, Jun Ho
AU - Kang, Kyungrok
AU - Won, Dongyeun
AU - Kwon, Min
AU - Cho, Suyeon
AU - Son, Young Woo
AU - Yang, Heejun
N1 - Publisher Copyright:
© 2021 Wiley-VCH GmbH
PY - 2021/4
Y1 - 2021/4
N2 - Layered semimetals such as monoclinic MoTe2 and WTe2 demonstrate superconducting, topological insulating, and Weyl semimetallic states based on their unique electronic band topology. While doping concentration, lattice constants, and spin–orbit coupling can largely modulate the quantum states of the semimetals, a puzzling issue is that their functional carrier density and magnetoresistance for practical applications critically vary by temperature, which cannot be explained by the conventional phonon effect or a structural phase transition. Here, a native doping-mediated thermomechanical manipulation of electric transport in semimetallic MoTe2 is reported, where effective transport is controlled by temperature in an equivalent manner to electric gating. Combining X-ray diffraction, scanning tunneling microscopy, transport measurements, and first-principles calculations, a Fermi level shift and subsequent changes in electronic structures are revealed as the origins of the practical transport changes in MoTe2. Moreover, the initial doping state of the MoTe2, determined by the Te vacancy density in two different growth methods, reciprocally affects the thermomechanical lattice and band structure changes, which is promising for novel electronic applications such as magnetic sensors and memory devices with layered semimetals.
AB - Layered semimetals such as monoclinic MoTe2 and WTe2 demonstrate superconducting, topological insulating, and Weyl semimetallic states based on their unique electronic band topology. While doping concentration, lattice constants, and spin–orbit coupling can largely modulate the quantum states of the semimetals, a puzzling issue is that their functional carrier density and magnetoresistance for practical applications critically vary by temperature, which cannot be explained by the conventional phonon effect or a structural phase transition. Here, a native doping-mediated thermomechanical manipulation of electric transport in semimetallic MoTe2 is reported, where effective transport is controlled by temperature in an equivalent manner to electric gating. Combining X-ray diffraction, scanning tunneling microscopy, transport measurements, and first-principles calculations, a Fermi level shift and subsequent changes in electronic structures are revealed as the origins of the practical transport changes in MoTe2. Moreover, the initial doping state of the MoTe2, determined by the Te vacancy density in two different growth methods, reciprocally affects the thermomechanical lattice and band structure changes, which is promising for novel electronic applications such as magnetic sensors and memory devices with layered semimetals.
KW - Fermi level shift
KW - doping
KW - layered semimetals
KW - magnetoresistance
KW - thermal expansion
UR - http://www.scopus.com/inward/record.url?scp=85102473756&partnerID=8YFLogxK
U2 - 10.1002/aelm.202000823
DO - 10.1002/aelm.202000823
M3 - Article
AN - SCOPUS:85102473756
SN - 2199-160X
VL - 7
JO - Advanced Electronic Materials
JF - Advanced Electronic Materials
IS - 4
M1 - 2000823
ER -