Thermoelectric properties of new Zintl phases: Ba4In8Sb16 and Ba6Ge25-x

Sung Jin Kim; Wei Chen; Ctirad Uher; Mercouri G. Kanatzidis

Thermoelectric properties of new Zintl phases: Ba₄In₈Sb₁₆ and Ba₆Ge_25-x

Sung Jin Kim, Wei Chen, Ctirad Uher, Mercouri G. Kanatzidis

Department of Chemistry & Nanoscience

Research output: Contribution to journal › Conference article › peer-review

Abstract

A new compound Ba₄In₈Sb₁₆ is being explored for thermoelectric potential. It crystallizes in the orthorhombic space group Pnma with a = 10.166(3) angstroms, b = 4.5239(14) angstroms, c = 19.495(6) angstroms and Z = 1. Ba₄In₈Sb₁₆ has a 2-dimensional structure with thick corrugated (In₈Sb₁₆)^8- layers separated by Ba ions. The compound is a narrow band-gap (approximately 0.10 eV) semiconductor. Polycrystalline ingots of Ba₄In₈Sb₁₆ show room temperature electrical conductivity of 135 S/cm and a Seebeck coefficient of 70 μV/K. The thermal conductivity of Ba₄In₈Sb₁₆ is about 1.7 W/m·K in the temperature range of 150-300 K. The new compound Ba₆Ge_25-x was also examined. Ba₆Ge_25-x adopts chiral clathrate structure with cubic space group P4₁32 and dimension of a = 14.5483(2) angstroms. Ba₆Ge_25-x shows room temperature electrical conductivity of 2000 S/cm and a Seebeck coefficient of -18 μV/K. The thermal conductivity was about 2.5 W/m·K at room temperature. Both of the compounds reporting here are air and moisture stable.

Original language	English
Pages (from-to)	165-168
Number of pages	4
Journal	International Conference on Thermoelectrics, ICT, Proceedings
State	Published - 1999
Event	18th International Conference on Thermoelectrics (ICT'99) - Baltimore, MD, USA Duration: 29 Aug 1999 → 2 Sep 1999

Cite this

@article{affa7cd799fc4055903a8983fccbaf89,

title = "Thermoelectric properties of new Zintl phases: Ba4In8Sb16 and Ba6Ge25-x",

abstract = "A new compound Ba4In8Sb16 is being explored for thermoelectric potential. It crystallizes in the orthorhombic space group Pnma with a = 10.166(3) angstroms, b = 4.5239(14) angstroms, c = 19.495(6) angstroms and Z = 1. Ba4In8Sb16 has a 2-dimensional structure with thick corrugated (In8Sb16)8- layers separated by Ba ions. The compound is a narrow band-gap (approximately 0.10 eV) semiconductor. Polycrystalline ingots of Ba4In8Sb16 show room temperature electrical conductivity of 135 S/cm and a Seebeck coefficient of 70 μV/K. The thermal conductivity of Ba4In8Sb16 is about 1.7 W/m·K in the temperature range of 150-300 K. The new compound Ba6Ge25-x was also examined. Ba6Ge25-x adopts chiral clathrate structure with cubic space group P4132 and dimension of a = 14.5483(2) angstroms. Ba6Ge25-x shows room temperature electrical conductivity of 2000 S/cm and a Seebeck coefficient of -18 μV/K. The thermal conductivity was about 2.5 W/m·K at room temperature. Both of the compounds reporting here are air and moisture stable.",

author = "Kim, {Sung Jin} and Wei Chen and Ctirad Uher and Kanatzidis, {Mercouri G.}",

year = "1999",

language = "English",

pages = "165--168",

journal = "International Conference on Thermoelectrics, ICT, Proceedings",

issn = "1094-2734",

note = "18th International Conference on Thermoelectrics (ICT'99) ; Conference date: 29-08-1999 Through 02-09-1999",

}

TY - JOUR

T1 - Thermoelectric properties of new Zintl phases

T2 - 18th International Conference on Thermoelectrics (ICT'99)

AU - Kim, Sung Jin

AU - Chen, Wei

AU - Uher, Ctirad

AU - Kanatzidis, Mercouri G.

PY - 1999

Y1 - 1999

N2 - A new compound Ba4In8Sb16 is being explored for thermoelectric potential. It crystallizes in the orthorhombic space group Pnma with a = 10.166(3) angstroms, b = 4.5239(14) angstroms, c = 19.495(6) angstroms and Z = 1. Ba4In8Sb16 has a 2-dimensional structure with thick corrugated (In8Sb16)8- layers separated by Ba ions. The compound is a narrow band-gap (approximately 0.10 eV) semiconductor. Polycrystalline ingots of Ba4In8Sb16 show room temperature electrical conductivity of 135 S/cm and a Seebeck coefficient of 70 μV/K. The thermal conductivity of Ba4In8Sb16 is about 1.7 W/m·K in the temperature range of 150-300 K. The new compound Ba6Ge25-x was also examined. Ba6Ge25-x adopts chiral clathrate structure with cubic space group P4132 and dimension of a = 14.5483(2) angstroms. Ba6Ge25-x shows room temperature electrical conductivity of 2000 S/cm and a Seebeck coefficient of -18 μV/K. The thermal conductivity was about 2.5 W/m·K at room temperature. Both of the compounds reporting here are air and moisture stable.

AB - A new compound Ba4In8Sb16 is being explored for thermoelectric potential. It crystallizes in the orthorhombic space group Pnma with a = 10.166(3) angstroms, b = 4.5239(14) angstroms, c = 19.495(6) angstroms and Z = 1. Ba4In8Sb16 has a 2-dimensional structure with thick corrugated (In8Sb16)8- layers separated by Ba ions. The compound is a narrow band-gap (approximately 0.10 eV) semiconductor. Polycrystalline ingots of Ba4In8Sb16 show room temperature electrical conductivity of 135 S/cm and a Seebeck coefficient of 70 μV/K. The thermal conductivity of Ba4In8Sb16 is about 1.7 W/m·K in the temperature range of 150-300 K. The new compound Ba6Ge25-x was also examined. Ba6Ge25-x adopts chiral clathrate structure with cubic space group P4132 and dimension of a = 14.5483(2) angstroms. Ba6Ge25-x shows room temperature electrical conductivity of 2000 S/cm and a Seebeck coefficient of -18 μV/K. The thermal conductivity was about 2.5 W/m·K at room temperature. Both of the compounds reporting here are air and moisture stable.

UR - http://www.scopus.com/inward/record.url?scp=0033301046&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0033301046

SN - 1094-2734

SP - 165

EP - 168

JO - International Conference on Thermoelectrics, ICT, Proceedings

JF - International Conference on Thermoelectrics, ICT, Proceedings

Y2 - 29 August 1999 through 2 September 1999

ER -

Thermoelectric properties of new Zintl phases: Ba4In8Sb16 and Ba6Ge25-x

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Thermoelectric properties of new Zintl phases: Ba₄In₈Sb₁₆ and Ba₆Ge_25-x