Thermoelectric Properties and Chemical Potential Tuning by K- and Se-Coalloying in (Pb0.5Sn0.5)1−xKxTe0.95Se0.05

Dianta Ginting; Chan Chieh Lin; Gareoung Kim; Song Yi Back; Bora Won; Hyunyong Cho; Jae Hyun Yun; Hyeon Seob So; Hosun Lee; Byung Kyu Yu; Sung Jin Kim; Jong Soo Rhyee

doi:10.1007/s13391-019-00130-1

Thermoelectric Properties and Chemical Potential Tuning by K- and Se-Coalloying in (Pb_0.5Sn_0.5)_1−xK_xTe_0.95Se_0.05

Dianta Ginting, Chan Chieh Lin, Gareoung Kim, Song Yi Back, Bora Won, Hyunyong Cho, Jae Hyun Yun, Hyeon Seob So, Hosun Lee, Byung Kyu Yu, Sung Jin Kim, Jong Soo Rhyee

Department of Chemistry & Nanoscience

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Abstract: Topological crystal insulator (TCI) and topological Dirac semimetals have topologically nontrivial surface and bulk state, respectively. The parent compound of Pb_0.5Sn_0.5Te exhibiting TCI band inversion has particle-hole symmetry owing to the gapless Dirac band implying a strong electron–hole bipolar compensation in Seebeck coefficient. We recently reported that weak perturbation of TCI state can enhance thermoelectric performance significantly due to highly dispersive and degenerated energy bands. It is a great interest that the further increase of chemical potential has beneficiary to thermoelectric performance in the vicinity of topological phase transition. Here we investigate the thermoelectric properties of the co-doping effect by K and Se in (Pb_0.5Sn_0.5)_1−xK_xTe_0.95Se_0.05 (x = 0.0, 0.005, 0.010, 0.015, 0.02) compounds. K-doping increases the band gap from 0.15 eV (Pb_0.5Sn_0.5Te) to 0.21 eV (x = 0.05) as well as increasing chemical potential resulting in the suppression of bipolar diffusion effect. In spite of the suppression of bipolar diffusion effect by K-doping, the power factor in K-doped compound is decreased significantly than the one of non-doped Pb_0.5Sn_0.5Te_0.95Se_0.05 compound. It indicates that when we increase chemical potential further on the breaking of topological band inversion, the thermoelectric performance is deteriorated because the chemical potential resides far from the linear band dispersions which become conventional material. The ZT for the K-doped (Pb_0.5Sn_0.5)_1−xK_xTe_0.95Se_0.05 is obtained as 0.91 at 750 K for x = 0.017 which is increased as much as 99% comparing to the pristine compound Pb_0.5Sn_0.5Te but it is reduced value (51.5%) comparing to those of Pb_0.5Sn_0.5Te_0.95Se_0.05 compound. We believe that this research is valuable on the confirmation that the weak perturbation of topological state and appropriate chemical potential tuning are important criteria in high thermoelectric performance. Graphical Abstract: [Figure not available: see fulltext.].

Original language	English
Pages (from-to)	342-349
Number of pages	8
Journal	Electronic Materials Letters
Volume	15
Issue number	3
DOIs	https://doi.org/10.1007/s13391-019-00130-1
State	Published - 1 May 2019

Bibliographical note

Funding Information:
Acknowledgements This work was supported by Nano-Material Technology Development Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (2011-0030147), J.-S. Rhyee was supported by the Materials and Components Technology Development Program of MOTIE/ KEIT (10063286), and S.-J. Kim acknowledge support by the National Research Foundation of Korea (NRF) Grant funded by the Korean Government(MSIP) (NRF-2015R1A5A1036133).

Publisher Copyright:
© 2019, The Korean Institute of Metals and Materials.

Keywords

Dirac semimetal
Nano precipitation
Thermoelectric
Topological crystalline insulator
ZT

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10.1007/s13391-019-00130-1

Cite this

@article{f8fff20f8ad142958ec1dc6f2d46b993,

title = "Thermoelectric Properties and Chemical Potential Tuning by K- and Se-Coalloying in (Pb0.5Sn0.5)1−xKxTe0.95Se0.05",

abstract = "Abstract: Topological crystal insulator (TCI) and topological Dirac semimetals have topologically nontrivial surface and bulk state, respectively. The parent compound of Pb0.5Sn0.5Te exhibiting TCI band inversion has particle-hole symmetry owing to the gapless Dirac band implying a strong electron–hole bipolar compensation in Seebeck coefficient. We recently reported that weak perturbation of TCI state can enhance thermoelectric performance significantly due to highly dispersive and degenerated energy bands. It is a great interest that the further increase of chemical potential has beneficiary to thermoelectric performance in the vicinity of topological phase transition. Here we investigate the thermoelectric properties of the co-doping effect by K and Se in (Pb0.5Sn0.5)1−xKxTe0.95Se0.05 (x = 0.0, 0.005, 0.010, 0.015, 0.02) compounds. K-doping increases the band gap from 0.15 eV (Pb0.5Sn0.5Te) to 0.21 eV (x = 0.05) as well as increasing chemical potential resulting in the suppression of bipolar diffusion effect. In spite of the suppression of bipolar diffusion effect by K-doping, the power factor in K-doped compound is decreased significantly than the one of non-doped Pb0.5Sn0.5Te0.95Se0.05 compound. It indicates that when we increase chemical potential further on the breaking of topological band inversion, the thermoelectric performance is deteriorated because the chemical potential resides far from the linear band dispersions which become conventional material. The ZT for the K-doped (Pb0.5Sn0.5)1−xKxTe0.95Se0.05 is obtained as 0.91 at 750 K for x = 0.017 which is increased as much as 99% comparing to the pristine compound Pb0.5Sn0.5Te but it is reduced value (51.5%) comparing to those of Pb0.5Sn0.5Te0.95Se0.05 compound. We believe that this research is valuable on the confirmation that the weak perturbation of topological state and appropriate chemical potential tuning are important criteria in high thermoelectric performance. Graphical Abstract: [Figure not available: see fulltext.].",

keywords = "Dirac semimetal, Nano precipitation, Thermoelectric, Topological crystalline insulator, ZT",

author = "Dianta Ginting and Lin, {Chan Chieh} and Gareoung Kim and Back, {Song Yi} and Bora Won and Hyunyong Cho and Yun, {Jae Hyun} and So, {Hyeon Seob} and Hosun Lee and Yu, {Byung Kyu} and Kim, {Sung Jin} and Rhyee, {Jong Soo}",

note = "Funding Information: Acknowledgements This work was supported by Nano-Material Technology Development Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (2011-0030147), J.-S. Rhyee was supported by the Materials and Components Technology Development Program of MOTIE/ KEIT (10063286), and S.-J. Kim acknowledge support by the National Research Foundation of Korea (NRF) Grant funded by the Korean Government(MSIP) (NRF-2015R1A5A1036133). Publisher Copyright: {\textcopyright} 2019, The Korean Institute of Metals and Materials.",

year = "2019",

month = may,

day = "1",

doi = "10.1007/s13391-019-00130-1",

language = "English",

volume = "15",

pages = "342--349",

journal = "Electronic Materials Letters",

issn = "1738-8090",

publisher = "Springer Netherlands",

number = "3",

}

TY - JOUR

T1 - Thermoelectric Properties and Chemical Potential Tuning by K- and Se-Coalloying in (Pb0.5Sn0.5)1−xKxTe0.95Se0.05

AU - Ginting, Dianta

AU - Lin, Chan Chieh

AU - Kim, Gareoung

AU - Back, Song Yi

AU - Won, Bora

AU - Cho, Hyunyong

AU - Yun, Jae Hyun

AU - So, Hyeon Seob

AU - Lee, Hosun

AU - Yu, Byung Kyu

AU - Kim, Sung Jin

AU - Rhyee, Jong Soo

N1 - Funding Information: Acknowledgements This work was supported by Nano-Material Technology Development Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (2011-0030147), J.-S. Rhyee was supported by the Materials and Components Technology Development Program of MOTIE/ KEIT (10063286), and S.-J. Kim acknowledge support by the National Research Foundation of Korea (NRF) Grant funded by the Korean Government(MSIP) (NRF-2015R1A5A1036133). Publisher Copyright: © 2019, The Korean Institute of Metals and Materials.

PY - 2019/5/1

Y1 - 2019/5/1

N2 - Abstract: Topological crystal insulator (TCI) and topological Dirac semimetals have topologically nontrivial surface and bulk state, respectively. The parent compound of Pb0.5Sn0.5Te exhibiting TCI band inversion has particle-hole symmetry owing to the gapless Dirac band implying a strong electron–hole bipolar compensation in Seebeck coefficient. We recently reported that weak perturbation of TCI state can enhance thermoelectric performance significantly due to highly dispersive and degenerated energy bands. It is a great interest that the further increase of chemical potential has beneficiary to thermoelectric performance in the vicinity of topological phase transition. Here we investigate the thermoelectric properties of the co-doping effect by K and Se in (Pb0.5Sn0.5)1−xKxTe0.95Se0.05 (x = 0.0, 0.005, 0.010, 0.015, 0.02) compounds. K-doping increases the band gap from 0.15 eV (Pb0.5Sn0.5Te) to 0.21 eV (x = 0.05) as well as increasing chemical potential resulting in the suppression of bipolar diffusion effect. In spite of the suppression of bipolar diffusion effect by K-doping, the power factor in K-doped compound is decreased significantly than the one of non-doped Pb0.5Sn0.5Te0.95Se0.05 compound. It indicates that when we increase chemical potential further on the breaking of topological band inversion, the thermoelectric performance is deteriorated because the chemical potential resides far from the linear band dispersions which become conventional material. The ZT for the K-doped (Pb0.5Sn0.5)1−xKxTe0.95Se0.05 is obtained as 0.91 at 750 K for x = 0.017 which is increased as much as 99% comparing to the pristine compound Pb0.5Sn0.5Te but it is reduced value (51.5%) comparing to those of Pb0.5Sn0.5Te0.95Se0.05 compound. We believe that this research is valuable on the confirmation that the weak perturbation of topological state and appropriate chemical potential tuning are important criteria in high thermoelectric performance. Graphical Abstract: [Figure not available: see fulltext.].

AB - Abstract: Topological crystal insulator (TCI) and topological Dirac semimetals have topologically nontrivial surface and bulk state, respectively. The parent compound of Pb0.5Sn0.5Te exhibiting TCI band inversion has particle-hole symmetry owing to the gapless Dirac band implying a strong electron–hole bipolar compensation in Seebeck coefficient. We recently reported that weak perturbation of TCI state can enhance thermoelectric performance significantly due to highly dispersive and degenerated energy bands. It is a great interest that the further increase of chemical potential has beneficiary to thermoelectric performance in the vicinity of topological phase transition. Here we investigate the thermoelectric properties of the co-doping effect by K and Se in (Pb0.5Sn0.5)1−xKxTe0.95Se0.05 (x = 0.0, 0.005, 0.010, 0.015, 0.02) compounds. K-doping increases the band gap from 0.15 eV (Pb0.5Sn0.5Te) to 0.21 eV (x = 0.05) as well as increasing chemical potential resulting in the suppression of bipolar diffusion effect. In spite of the suppression of bipolar diffusion effect by K-doping, the power factor in K-doped compound is decreased significantly than the one of non-doped Pb0.5Sn0.5Te0.95Se0.05 compound. It indicates that when we increase chemical potential further on the breaking of topological band inversion, the thermoelectric performance is deteriorated because the chemical potential resides far from the linear band dispersions which become conventional material. The ZT for the K-doped (Pb0.5Sn0.5)1−xKxTe0.95Se0.05 is obtained as 0.91 at 750 K for x = 0.017 which is increased as much as 99% comparing to the pristine compound Pb0.5Sn0.5Te but it is reduced value (51.5%) comparing to those of Pb0.5Sn0.5Te0.95Se0.05 compound. We believe that this research is valuable on the confirmation that the weak perturbation of topological state and appropriate chemical potential tuning are important criteria in high thermoelectric performance. Graphical Abstract: [Figure not available: see fulltext.].

KW - Dirac semimetal

KW - Nano precipitation

KW - Thermoelectric

KW - Topological crystalline insulator

KW - ZT

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U2 - 10.1007/s13391-019-00130-1

DO - 10.1007/s13391-019-00130-1

M3 - Article

AN - SCOPUS:85064045909

SN - 1738-8090

VL - 15

SP - 342

EP - 349

JO - Electronic Materials Letters

JF - Electronic Materials Letters

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ER -