Thermoelectric power of MgB2-xBex

J. S. Ahn; E. S. Choi; W. Kang; D. J. Singh; M. Han; E. J. Choi; E. J. Choi

doi:10.1103/PhysRevB.65.214534

Thermoelectric power of MgB_2-xBe_x

J. S. Ahn, E. S. Choi, W. Kang, D. J. Singh, M. Han, E. J. Choi, E. J. Choi

Department of Physics

Research output: Contribution to journal › Article › peer-review

21 Scopus citations

Abstract

We investigated thermoelectric power S(T) of MgB_2-xBe_x (x=0, 0.2, 0.3, 0.4, and 0.6) S(T) decreases systematically with x, suggesting that the hole density increases. Our band calculation shows that the increase occurs in the σ band. With the hole doping, T_c decreases. Implication of this phenomenon is discussed within the BCS framework. While the Mott formula explains only the linear part of S(T) at low temperature, incorporation of electron-phonon interaction enables us to explain S(T) over wide temperature range including the anomalous behavior at high temperature.

Original language	English
Article number	214534
Pages (from-to)	2145341-2145345
Number of pages	5
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	65
Issue number	21
DOIs	https://doi.org/10.1103/PhysRevB.65.214534
State	Published - 1 Jun 2002

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title = "Thermoelectric power of MgB2-xBex",

abstract = "We investigated thermoelectric power S(T) of MgB2-xBex (x=0, 0.2, 0.3, 0.4, and 0.6) S(T) decreases systematically with x, suggesting that the hole density increases. Our band calculation shows that the increase occurs in the σ band. With the hole doping, Tc decreases. Implication of this phenomenon is discussed within the BCS framework. While the Mott formula explains only the linear part of S(T) at low temperature, incorporation of electron-phonon interaction enables us to explain S(T) over wide temperature range including the anomalous behavior at high temperature.",

author = "Ahn, {J. S.} and Choi, {E. S.} and W. Kang and Singh, {D. J.} and M. Han and Choi, {E. J.} and Choi, {E. J.}",

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doi = "10.1103/PhysRevB.65.214534",

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T1 - Thermoelectric power of MgB2-xBex

AU - Ahn, J. S.

AU - Choi, E. S.

AU - Kang, W.

AU - Singh, D. J.

AU - Han, M.

AU - Choi, E. J.

PY - 2002/6/1

Y1 - 2002/6/1

N2 - We investigated thermoelectric power S(T) of MgB2-xBex (x=0, 0.2, 0.3, 0.4, and 0.6) S(T) decreases systematically with x, suggesting that the hole density increases. Our band calculation shows that the increase occurs in the σ band. With the hole doping, Tc decreases. Implication of this phenomenon is discussed within the BCS framework. While the Mott formula explains only the linear part of S(T) at low temperature, incorporation of electron-phonon interaction enables us to explain S(T) over wide temperature range including the anomalous behavior at high temperature.

AB - We investigated thermoelectric power S(T) of MgB2-xBex (x=0, 0.2, 0.3, 0.4, and 0.6) S(T) decreases systematically with x, suggesting that the hole density increases. Our band calculation shows that the increase occurs in the σ band. With the hole doping, Tc decreases. Implication of this phenomenon is discussed within the BCS framework. While the Mott formula explains only the linear part of S(T) at low temperature, incorporation of electron-phonon interaction enables us to explain S(T) over wide temperature range including the anomalous behavior at high temperature.

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JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

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ER -

Thermoelectric power of MgB2-xBex

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Thermoelectric power of MgB_2-xBe_x