Thermoelectric heating of Ge2Sb2 Te5 in phase change memory devices

Dong Seok Suh; Cheolkyu Kim; Kijoon H.P. Kim; Youn Seon Kang; Tae Yon Lee; Yoonho Khang; Tae Sang Park; Young Gui Yoon; Jino Im; Jisoon Ihm

doi:10.1063/1.3259649

Thermoelectric heating of Ge2_Sb2 Te₅ in phase change memory devices

Dong Seok Suh, Cheolkyu Kim, Kijoon H.P. Kim, Youn Seon Kang, Tae Yon Lee, Yoonho Khang, Tae Sang Park, Young Gui Yoon, Jino Im, Jisoon Ihm

Department of Physics

Research output: Contribution to journal › Article › peer-review

48 Scopus citations

Abstract

We report on the demonstration of the active thermoelectric application to nanometer-scaled semiconductor devices. The thermoelectric heating already exists during programming in conventional phase change memory (PRAM) cells, which is only a minor supplement to Joule heating. Here, by rigorously designing devices, we have demonstrated an unprecedentedly high efficiency of PRAM, where the majority of the heat is supplied by the thermoelectric effect.

Original language	English
Article number	123115
Journal	Applied Physics Letters
Volume	96
Issue number	12
DOIs	https://doi.org/10.1063/1.3259649
State	Published - 2010

Bibliographical note

Funding Information:
We gratefully acknowledge helpful comments and discussions with Professor David G. Cahill, Professor Matthias Wuttig, and Professor Philip Kim. Y.Y., J.I., and J.Ih. acknowledge that part of this work was supported by the SRC program (Center for Nanotube and Nanostructured Composites) of MOST/KOSEF, the Korea Research Foundation Grant No. KRF-2005-070-C00041, the Korea Government MOEHRD Basic Research Fund Grant No. KRF-2006-341-C000015, and Korea Institute of Science and Technology Information.

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10.1063/1.3259649

Cite this

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title = "Thermoelectric heating of Ge2Sb2 Te5 in phase change memory devices",

abstract = "We report on the demonstration of the active thermoelectric application to nanometer-scaled semiconductor devices. The thermoelectric heating already exists during programming in conventional phase change memory (PRAM) cells, which is only a minor supplement to Joule heating. Here, by rigorously designing devices, we have demonstrated an unprecedentedly high efficiency of PRAM, where the majority of the heat is supplied by the thermoelectric effect.",

author = "Suh, {Dong Seok} and Cheolkyu Kim and Kim, {Kijoon H.P.} and Kang, {Youn Seon} and Lee, {Tae Yon} and Yoonho Khang and Park, {Tae Sang} and Yoon, {Young Gui} and Jino Im and Jisoon Ihm",

note = "Funding Information: We gratefully acknowledge helpful comments and discussions with Professor David G. Cahill, Professor Matthias Wuttig, and Professor Philip Kim. Y.Y., J.I., and J.Ih. acknowledge that part of this work was supported by the SRC program (Center for Nanotube and Nanostructured Composites) of MOST/KOSEF, the Korea Research Foundation Grant No. KRF-2005-070-C00041, the Korea Government MOEHRD Basic Research Fund Grant No. KRF-2006-341-C000015, and Korea Institute of Science and Technology Information. ",

year = "2010",

doi = "10.1063/1.3259649",

language = "English",

volume = "96",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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T1 - Thermoelectric heating of Ge2Sb2 Te5 in phase change memory devices

AU - Suh, Dong Seok

AU - Kim, Cheolkyu

AU - Kim, Kijoon H.P.

AU - Kang, Youn Seon

AU - Lee, Tae Yon

AU - Khang, Yoonho

AU - Park, Tae Sang

AU - Yoon, Young Gui

AU - Im, Jino

AU - Ihm, Jisoon

N1 - Funding Information: We gratefully acknowledge helpful comments and discussions with Professor David G. Cahill, Professor Matthias Wuttig, and Professor Philip Kim. Y.Y., J.I., and J.Ih. acknowledge that part of this work was supported by the SRC program (Center for Nanotube and Nanostructured Composites) of MOST/KOSEF, the Korea Research Foundation Grant No. KRF-2005-070-C00041, the Korea Government MOEHRD Basic Research Fund Grant No. KRF-2006-341-C000015, and Korea Institute of Science and Technology Information.

PY - 2010

Y1 - 2010

N2 - We report on the demonstration of the active thermoelectric application to nanometer-scaled semiconductor devices. The thermoelectric heating already exists during programming in conventional phase change memory (PRAM) cells, which is only a minor supplement to Joule heating. Here, by rigorously designing devices, we have demonstrated an unprecedentedly high efficiency of PRAM, where the majority of the heat is supplied by the thermoelectric effect.

AB - We report on the demonstration of the active thermoelectric application to nanometer-scaled semiconductor devices. The thermoelectric heating already exists during programming in conventional phase change memory (PRAM) cells, which is only a minor supplement to Joule heating. Here, by rigorously designing devices, we have demonstrated an unprecedentedly high efficiency of PRAM, where the majority of the heat is supplied by the thermoelectric effect.

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