Thermoelectric heating of Ge2Sb2 Te5 in phase change memory devices

Dong Seok Suh, Cheolkyu Kim, Kijoon H.P. Kim, Youn Seon Kang, Tae Yon Lee, Yoonho Khang, Tae Sang Park, Young Gui Yoon, Jino Im, Jisoon Ihm

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We report on the demonstration of the active thermoelectric application to nanometer-scaled semiconductor devices. The thermoelectric heating already exists during programming in conventional phase change memory (PRAM) cells, which is only a minor supplement to Joule heating. Here, by rigorously designing devices, we have demonstrated an unprecedentedly high efficiency of PRAM, where the majority of the heat is supplied by the thermoelectric effect.

Original languageEnglish
Article number123115
JournalApplied Physics Letters
Issue number12
StatePublished - 2010

Bibliographical note

Funding Information:
We gratefully acknowledge helpful comments and discussions with Professor David G. Cahill, Professor Matthias Wuttig, and Professor Philip Kim. Y.Y., J.I., and J.Ih. acknowledge that part of this work was supported by the SRC program (Center for Nanotube and Nanostructured Composites) of MOST/KOSEF, the Korea Research Foundation Grant No. KRF-2005-070-C00041, the Korea Government MOEHRD Basic Research Fund Grant No. KRF-2006-341-C000015, and Korea Institute of Science and Technology Information.


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