Thermal diffusion processes in bulk heterojunction formation for poly-3-hexylthiophene/ C60 single heterojunction photovoltaics

Kyungkon Kim; Jiwen Liu; David L. Carroll

doi:10.1063/1.2199970

Thermal diffusion processes in bulk heterojunction formation for poly-3-hexylthiophene/ C60 single heterojunction photovoltaics

Kyungkon Kim
, Jiwen Liu
, David L. Carroll

Department of Chemistry & Nanoscience

Research output: Contribution to journal › Article › peer-review

39 Scopus citations

Abstract

We have fabricated bulk heterojunction (BHJ) photovoltaic (PV) devices by thermal annealing of poly-3-hexylthiophene (P3HT)/ C60 single heterojunction (HJ) PV devices at near the melting point of P3HT. The BHJ PV devices exhibited an increased efficiency of 12 times compared with single HJs. We found that the annealing of HJ devices produces an interpenetrated network of interfaces between the P3HT and C60 layers. This plays a major role in carrier separation and mobility enhancement. Also the formation of crystalline C60 domains, concurrent with polymer crystallinity, contributes to an increase in the overall external conversion efficiency. Surprisingly, the heterojunction morphology, as inferred through device performance, strongly depends on the thermal gradient across the film.

Original language	English
Article number	181911
Journal	Applied Physics Letters
Volume	88
Issue number	18
DOIs	https://doi.org/10.1063/1.2199970
State	Published - 1 May 2006

Bibliographical note

Funding Information:
This work was supported at Wake Forest University by the Air Force Office of Scientific Research (AFOSR) under Grant No. FA9550-04-1-0161. The authors also acknowledge useful conversations with Dr. Namboothiry A. G. Manoj.

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Cite this

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title = "Thermal diffusion processes in bulk heterojunction formation for poly-3-hexylthiophene/ C60 single heterojunction photovoltaics",

abstract = "We have fabricated bulk heterojunction (BHJ) photovoltaic (PV) devices by thermal annealing of poly-3-hexylthiophene (P3HT)/ C60 single heterojunction (HJ) PV devices at near the melting point of P3HT. The BHJ PV devices exhibited an increased efficiency of 12 times compared with single HJs. We found that the annealing of HJ devices produces an interpenetrated network of interfaces between the P3HT and C60 layers. This plays a major role in carrier separation and mobility enhancement. Also the formation of crystalline C60 domains, concurrent with polymer crystallinity, contributes to an increase in the overall external conversion efficiency. Surprisingly, the heterojunction morphology, as inferred through device performance, strongly depends on the thermal gradient across the film.",

author = "Kyungkon Kim and Jiwen Liu and Carroll, \{David L.\}",

note = "Funding Information: This work was supported at Wake Forest University by the Air Force Office of Scientific Research (AFOSR) under Grant No. FA9550-04-1-0161. The authors also acknowledge useful conversations with Dr. Namboothiry A. G. Manoj.",

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AU - Liu, Jiwen

AU - Carroll, David L.

N1 - Funding Information: This work was supported at Wake Forest University by the Air Force Office of Scientific Research (AFOSR) under Grant No. FA9550-04-1-0161. The authors also acknowledge useful conversations with Dr. Namboothiry A. G. Manoj.

PY - 2006/5/1

Y1 - 2006/5/1

N2 - We have fabricated bulk heterojunction (BHJ) photovoltaic (PV) devices by thermal annealing of poly-3-hexylthiophene (P3HT)/ C60 single heterojunction (HJ) PV devices at near the melting point of P3HT. The BHJ PV devices exhibited an increased efficiency of 12 times compared with single HJs. We found that the annealing of HJ devices produces an interpenetrated network of interfaces between the P3HT and C60 layers. This plays a major role in carrier separation and mobility enhancement. Also the formation of crystalline C60 domains, concurrent with polymer crystallinity, contributes to an increase in the overall external conversion efficiency. Surprisingly, the heterojunction morphology, as inferred through device performance, strongly depends on the thermal gradient across the film.

AB - We have fabricated bulk heterojunction (BHJ) photovoltaic (PV) devices by thermal annealing of poly-3-hexylthiophene (P3HT)/ C60 single heterojunction (HJ) PV devices at near the melting point of P3HT. The BHJ PV devices exhibited an increased efficiency of 12 times compared with single HJs. We found that the annealing of HJ devices produces an interpenetrated network of interfaces between the P3HT and C60 layers. This plays a major role in carrier separation and mobility enhancement. Also the formation of crystalline C60 domains, concurrent with polymer crystallinity, contributes to an increase in the overall external conversion efficiency. Surprisingly, the heterojunction morphology, as inferred through device performance, strongly depends on the thermal gradient across the film.

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Thermal diffusion processes in bulk heterojunction formation for poly-3-hexylthiophene/ C60 single heterojunction photovoltaics

Abstract

Bibliographical note

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