The structure, phase and chemical composition of CZTSe thin films

A. S. Opanasyuk; P. V. Koval; D. Nam; H. Cheong; A. R. Jeong; W. Jo; A. G. Ponomarev

doi:10.15407/fm21.02.164

The structure, phase and chemical composition of CZTSe thin films

A. S. Opanasyuk, P. V. Koval, D. Nam, H. Cheong, A. R. Jeong, W. Jo, A. G. Ponomarev

Department of Physics

Research output: Contribution to journal › Article › peer-review

Abstract

Cu₂ZnSnSe₄ thin films obtained by co-evaporation of components using an electron beam evaporation system were investigated by scanning electron microscopy, X-ray analy-sis, PIXI and RBS methods. The analysis of the diffraction patterns showed that the films are almost single-phased and contain mainly CZTSe compound, which has a tetragonal kesterite lattice type. The samples have textural growth of [211]. The lattice parameters of the material varied in the range of a = (0.56640-0.56867) nm, s = (1.13466-1.13776) nm, c/2a = 0.9983-1.0017 which correlate well with the reference data in a stable phase CZTSe compounds. From our PIXE analyses we assessed the influence of the growth conditions on the samples' chemical composition and mapped the surface distribution.

Original language	English
Pages (from-to)	164-170
Number of pages	7
Journal	Functional Materials
Volume	21
Issue number	2
DOIs	https://doi.org/10.15407/fm21.02.164
State	Published - 2014

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abstract = "Cu2ZnSnSe4 thin films obtained by co-evaporation of components using an electron beam evaporation system were investigated by scanning electron microscopy, X-ray analy-sis, PIXI and RBS methods. The analysis of the diffraction patterns showed that the films are almost single-phased and contain mainly CZTSe compound, which has a tetragonal kesterite lattice type. The samples have textural growth of [211]. The lattice parameters of the material varied in the range of a = (0.56640-0.56867) nm, s = (1.13466-1.13776) nm, c/2a = 0.9983-1.0017 which correlate well with the reference data in a stable phase CZTSe compounds. From our PIXE analyses we assessed the influence of the growth conditions on the samples' chemical composition and mapped the surface distribution.",

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T1 - The structure, phase and chemical composition of CZTSe thin films

AU - Opanasyuk, A. S.

AU - Koval, P. V.

AU - Nam, D.

AU - Cheong, H.

AU - Jeong, A. R.

AU - Jo, W.

AU - Ponomarev, A. G.

PY - 2014

Y1 - 2014

N2 - Cu2ZnSnSe4 thin films obtained by co-evaporation of components using an electron beam evaporation system were investigated by scanning electron microscopy, X-ray analy-sis, PIXI and RBS methods. The analysis of the diffraction patterns showed that the films are almost single-phased and contain mainly CZTSe compound, which has a tetragonal kesterite lattice type. The samples have textural growth of [211]. The lattice parameters of the material varied in the range of a = (0.56640-0.56867) nm, s = (1.13466-1.13776) nm, c/2a = 0.9983-1.0017 which correlate well with the reference data in a stable phase CZTSe compounds. From our PIXE analyses we assessed the influence of the growth conditions on the samples' chemical composition and mapped the surface distribution.

AB - Cu2ZnSnSe4 thin films obtained by co-evaporation of components using an electron beam evaporation system were investigated by scanning electron microscopy, X-ray analy-sis, PIXI and RBS methods. The analysis of the diffraction patterns showed that the films are almost single-phased and contain mainly CZTSe compound, which has a tetragonal kesterite lattice type. The samples have textural growth of [211]. The lattice parameters of the material varied in the range of a = (0.56640-0.56867) nm, s = (1.13466-1.13776) nm, c/2a = 0.9983-1.0017 which correlate well with the reference data in a stable phase CZTSe compounds. From our PIXE analyses we assessed the influence of the growth conditions on the samples' chemical composition and mapped the surface distribution.

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The structure, phase and chemical composition of CZTSe thin films

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