TY - GEN
T1 - The role of cetyltrimethylammonium bromide in efficiency of organic-quantum dot hybrid solar cell
AU - Heo, Seung Jin
AU - Yoon, Seokhyun
AU - Oh, Sang Hoon
AU - Kim, Hyun Jae
PY - 2012
Y1 - 2012
N2 - We investigated the effects of cetyltrimethylammonium bromide (CTAB) in organic-quantum dot hybrid solar cell. Hybrid active layer was composed of poly (3-hexylthiophene) (P3HT) and PbS colloidal quantum dot (CQD). By employing hybrid active layer, which absorbed the light in wide range, expected power conversion efficiency of hybrid solar cell will be increased. However, PbS CQD has relatively low performance compared with P3HT. We used CTAB as inorganic ligand of PbS CQD surface. As a result, we observed short circuit current density of hybrid solar cell and open circuit voltage were increased.
AB - We investigated the effects of cetyltrimethylammonium bromide (CTAB) in organic-quantum dot hybrid solar cell. Hybrid active layer was composed of poly (3-hexylthiophene) (P3HT) and PbS colloidal quantum dot (CQD). By employing hybrid active layer, which absorbed the light in wide range, expected power conversion efficiency of hybrid solar cell will be increased. However, PbS CQD has relatively low performance compared with P3HT. We used CTAB as inorganic ligand of PbS CQD surface. As a result, we observed short circuit current density of hybrid solar cell and open circuit voltage were increased.
KW - Cetyltrimethylammonium bromide
KW - Hybrid solar cell
KW - Inorganic passivation
KW - PbS colloidal quantum dot
UR - http://www.scopus.com/inward/record.url?scp=84864977124&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:84864977124
SN - 9781466562769
T3 - Technical Proceedings of the 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012
SP - 428
EP - 431
BT - Technical Proceedings of the 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012
T2 - Nanotechnology 2012: Bio Sensors, Instruments, Medical, Environment and Energy - 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012
Y2 - 18 June 2012 through 21 June 2012
ER -