The effects of pressure and magnetic field on the charge transport of heavily FeCl4- doped polyacetylene

A. N. Aleshin; T. J. Kim; D. S. Suh; Y. W. Park; H. Kang; W. Kang

doi:10.1016/S0040-6090(02)00578-3

The effects of pressure and magnetic field on the charge transport of heavily FeCl₄^- doped polyacetylene

A. N. Aleshin, T. J. Kim, D. S. Suh, Y. W. Park, H. Kang, W. Kang

Department of Physics

Research output: Contribution to journal › Conference article › peer-review

Abstract

The effects of hydrostatic pressure and magnetic field on the charge transport of oriented polyacetylene (PA) films heavily doped with FeCl₄^- have been studied in the temperature range 0.37-300 K. It was found that application of pressure increases the room temperature conductivity and decreases the resistivity ratio ρ_r = ρ(0.37 K)/ρ(300 K) by ∼20-30%. At T < 2 K the temperature dependence of resistivity ρ(T) ∼ln T at ambient pressure and at 10 kbar. Transverse magnetoresistance (MR) at 10 kbar was found to be negative, linear and almost temperature independent at T < 2 K. The observed low temperature ρ(T) and MR behavior has attributed to weak localization which accompanied by the effect of saturation of electron dephasing by two-level systems of a special type. The stronger behavior of ρ(T) and MR at T > 2 K has associated with further suppression of weak localization due to more effective dephasing effect by low energy vibrational excitations.

Original language	English
Pages (from-to)	57-60
Number of pages	4
Journal	Thin Solid Films
Volume	417
Issue number	1-2
DOIs	https://doi.org/10.1016/S0040-6090(02)00578-3
State	Published - 30 Sep 2002
Event	Proceedings of the International Conference on Materials for - Singapore, Singapore Duration: 1 Jul 2001 → 6 Jul 2001

Bibliographical note

Funding Information:
We are grateful to V.I. Kozub for discussions. This work was supported by KISTEP under the contract No. 98-I-01-04-A-026, Ministry of Science and Technology (MOST), Korea. Partial support for A.N.A. is from the BK-21 Program of Ministry of Education (MOE), Korea.

Keywords

Magnetic properties
Organic conductors
Polymers
Resistivity

Access to Document

10.1016/S0040-6090(02)00578-3

Cite this

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title = "The effects of pressure and magnetic field on the charge transport of heavily FeCl4- doped polyacetylene",

abstract = "The effects of hydrostatic pressure and magnetic field on the charge transport of oriented polyacetylene (PA) films heavily doped with FeCl4- have been studied in the temperature range 0.37-300 K. It was found that application of pressure increases the room temperature conductivity and decreases the resistivity ratio ρr = ρ(0.37 K)/ρ(300 K) by ∼20-30%. At T < 2 K the temperature dependence of resistivity ρ(T) ∼ln T at ambient pressure and at 10 kbar. Transverse magnetoresistance (MR) at 10 kbar was found to be negative, linear and almost temperature independent at T < 2 K. The observed low temperature ρ(T) and MR behavior has attributed to weak localization which accompanied by the effect of saturation of electron dephasing by two-level systems of a special type. The stronger behavior of ρ(T) and MR at T > 2 K has associated with further suppression of weak localization due to more effective dephasing effect by low energy vibrational excitations.",

keywords = "Magnetic properties, Organic conductors, Polymers, Resistivity",

author = "Aleshin, {A. N.} and Kim, {T. J.} and Suh, {D. S.} and Park, {Y. W.} and H. Kang and W. Kang",

note = "Funding Information: We are grateful to V.I. Kozub for discussions. This work was supported by KISTEP under the contract No. 98-I-01-04-A-026, Ministry of Science and Technology (MOST), Korea. Partial support for A.N.A. is from the BK-21 Program of Ministry of Education (MOE), Korea.; Proceedings of the International Conference on Materials for ; Conference date: 01-07-2001 Through 06-07-2001",

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doi = "10.1016/S0040-6090(02)00578-3",

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T1 - The effects of pressure and magnetic field on the charge transport of heavily FeCl4- doped polyacetylene

AU - Aleshin, A. N.

AU - Kim, T. J.

AU - Suh, D. S.

AU - Park, Y. W.

AU - Kang, H.

AU - Kang, W.

N1 - Funding Information: We are grateful to V.I. Kozub for discussions. This work was supported by KISTEP under the contract No. 98-I-01-04-A-026, Ministry of Science and Technology (MOST), Korea. Partial support for A.N.A. is from the BK-21 Program of Ministry of Education (MOE), Korea.

PY - 2002/9/30

Y1 - 2002/9/30

N2 - The effects of hydrostatic pressure and magnetic field on the charge transport of oriented polyacetylene (PA) films heavily doped with FeCl4- have been studied in the temperature range 0.37-300 K. It was found that application of pressure increases the room temperature conductivity and decreases the resistivity ratio ρr = ρ(0.37 K)/ρ(300 K) by ∼20-30%. At T < 2 K the temperature dependence of resistivity ρ(T) ∼ln T at ambient pressure and at 10 kbar. Transverse magnetoresistance (MR) at 10 kbar was found to be negative, linear and almost temperature independent at T < 2 K. The observed low temperature ρ(T) and MR behavior has attributed to weak localization which accompanied by the effect of saturation of electron dephasing by two-level systems of a special type. The stronger behavior of ρ(T) and MR at T > 2 K has associated with further suppression of weak localization due to more effective dephasing effect by low energy vibrational excitations.

AB - The effects of hydrostatic pressure and magnetic field on the charge transport of oriented polyacetylene (PA) films heavily doped with FeCl4- have been studied in the temperature range 0.37-300 K. It was found that application of pressure increases the room temperature conductivity and decreases the resistivity ratio ρr = ρ(0.37 K)/ρ(300 K) by ∼20-30%. At T < 2 K the temperature dependence of resistivity ρ(T) ∼ln T at ambient pressure and at 10 kbar. Transverse magnetoresistance (MR) at 10 kbar was found to be negative, linear and almost temperature independent at T < 2 K. The observed low temperature ρ(T) and MR behavior has attributed to weak localization which accompanied by the effect of saturation of electron dephasing by two-level systems of a special type. The stronger behavior of ρ(T) and MR at T > 2 K has associated with further suppression of weak localization due to more effective dephasing effect by low energy vibrational excitations.

KW - Magnetic properties

KW - Organic conductors

KW - Polymers

KW - Resistivity

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U2 - 10.1016/S0040-6090(02)00578-3

DO - 10.1016/S0040-6090(02)00578-3

M3 - Conference article

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T2 - Proceedings of the International Conference on Materials for

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