The effect of a source-contacted light shield on the electrical characteristics of an LTPS TFT

Miryeon Kim; Wookyung Sun; Jongseuk Kang; Hyungsoon Shin

doi:10.1088/1361-6641/aa7477

The effect of a source-contacted light shield on the electrical characteristics of an LTPS TFT

Miryeon Kim, Wookyung Sun, Jongseuk Kang, Hyungsoon Shin

Electronic and Electrical Engineering

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

The electrical characteristics of a low-temperature polycrystalline silicon thin-film transistor (TFT) with a source-contacted light shield (SCLS) are observed and analyzed. Compared with that of a conventional TFT without a light shield (LS), the on-current of the TFT with an SCLS is lower because the SCLS blocks the fringing electric field from the drain to the active layer. Furthermore, the gate-to-source capacitance (C _gs) of the TFT with an SCLS in the off and saturation regions is higher than that of a conventional TFT, which is due to the gate-to-LS capacitance (C _g-LS). The electrical characteristics of the TFT with an SCLS are thoroughly investigated by two-dimensional device simulations, and a semi-empirical C _g-LS model for SPICE simulation is proposed and verified.

Original language	English
Article number	085001
Journal	Semiconductor Science and Technology
Volume	32
Issue number	8
DOIs	https://doi.org/10.1088/1361-6641/aa7477
State	Published - 3 Jul 2017

Bibliographical note

Publisher Copyright:
© 2017 IOP Publishing Ltd.

Keywords

SPICE simulation
light shield
low-temperature polycrystalline silicon (LTPS)
thinfilm transistor (TFT)

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10.1088/1361-6641/aa7477

Cite this

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title = "The effect of a source-contacted light shield on the electrical characteristics of an LTPS TFT",

abstract = "The electrical characteristics of a low-temperature polycrystalline silicon thin-film transistor (TFT) with a source-contacted light shield (SCLS) are observed and analyzed. Compared with that of a conventional TFT without a light shield (LS), the on-current of the TFT with an SCLS is lower because the SCLS blocks the fringing electric field from the drain to the active layer. Furthermore, the gate-to-source capacitance (C gs) of the TFT with an SCLS in the off and saturation regions is higher than that of a conventional TFT, which is due to the gate-to-LS capacitance (C g-LS). The electrical characteristics of the TFT with an SCLS are thoroughly investigated by two-dimensional device simulations, and a semi-empirical C g-LS model for SPICE simulation is proposed and verified.",

keywords = "SPICE simulation, light shield, low-temperature polycrystalline silicon (LTPS), thinfilm transistor (TFT)",

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AU - Kim, Miryeon

AU - Sun, Wookyung

AU - Kang, Jongseuk

AU - Shin, Hyungsoon

PY - 2017/7/3

Y1 - 2017/7/3

N2 - The electrical characteristics of a low-temperature polycrystalline silicon thin-film transistor (TFT) with a source-contacted light shield (SCLS) are observed and analyzed. Compared with that of a conventional TFT without a light shield (LS), the on-current of the TFT with an SCLS is lower because the SCLS blocks the fringing electric field from the drain to the active layer. Furthermore, the gate-to-source capacitance (C gs) of the TFT with an SCLS in the off and saturation regions is higher than that of a conventional TFT, which is due to the gate-to-LS capacitance (C g-LS). The electrical characteristics of the TFT with an SCLS are thoroughly investigated by two-dimensional device simulations, and a semi-empirical C g-LS model for SPICE simulation is proposed and verified.

AB - The electrical characteristics of a low-temperature polycrystalline silicon thin-film transistor (TFT) with a source-contacted light shield (SCLS) are observed and analyzed. Compared with that of a conventional TFT without a light shield (LS), the on-current of the TFT with an SCLS is lower because the SCLS blocks the fringing electric field from the drain to the active layer. Furthermore, the gate-to-source capacitance (C gs) of the TFT with an SCLS in the off and saturation regions is higher than that of a conventional TFT, which is due to the gate-to-LS capacitance (C g-LS). The electrical characteristics of the TFT with an SCLS are thoroughly investigated by two-dimensional device simulations, and a semi-empirical C g-LS model for SPICE simulation is proposed and verified.

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KW - low-temperature polycrystalline silicon (LTPS)

KW - thinfilm transistor (TFT)

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The effect of a source-contacted light shield on the electrical characteristics of an LTPS TFT

Abstract

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Keywords

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