The electrical characteristics of a low-temperature polycrystalline silicon thin-film transistor (TFT) with a source-contacted light shield (SCLS) are observed and analyzed. Compared with that of a conventional TFT without a light shield (LS), the on-current of the TFT with an SCLS is lower because the SCLS blocks the fringing electric field from the drain to the active layer. Furthermore, the gate-to-source capacitance (C gs) of the TFT with an SCLS in the off and saturation regions is higher than that of a conventional TFT, which is due to the gate-to-LS capacitance (C g-LS). The electrical characteristics of the TFT with an SCLS are thoroughly investigated by two-dimensional device simulations, and a semi-empirical C g-LS model for SPICE simulation is proposed and verified.
Bibliographical noteFunding Information:
This work was supported by the LG Display Co., Ltd and the National Research Foundation of Korea (NRF) (No. 2017R1A2B4002540).
© 2017 IOP Publishing Ltd.
- light shield
- low-temperature polycrystalline silicon (LTPS)
- SPICE simulation
- thinfilm transistor (TFT)