The characteristics of Cu(In, Ga)Se                         2                          thin-film solar cells by bandgap grading

Young Ill Kim; Kee Jeong Yang; Se Yun Kim; Jin Kyu Kang; Juran Kim; William Jo; Hyesun Yoo; Jun Ho Kim; Dae Hwan Kim

doi:10.1016/j.jiec.2019.04.010

The characteristics of Cu(In, Ga)Se ₂ thin-film solar cells by bandgap grading

Young Ill Kim, Kee Jeong Yang, Se Yun Kim, Jin Kyu Kang, Juran Kim, William Jo, Hyesun Yoo, Jun Ho Kim, Dae Hwan Kim

Department of Physics

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

We investigated the characteristics of Cu(In, Ga)Se ₂ solar cells with bandgap (E _g ) grading. Two precursor types were employed: Mo/Cu _0.75 Ga _0.25 /In/Ga ₂ Se ₃ (CIGSe-1) and Mo/Cu/In/Ga ₂ Se ₃ (CIGSe-2). In CIGSe-1, the range of depths with a high Ga content is wider than that in CIGSe-2; thus, the region in which the main electron-trapping clusters and high-population deep donor defects can form is larger, and the defect density is higher. In the defect energy level range, various other defects and defect clusters exist with a defect density of 2.83 × 10 ¹⁵ cm ⁻³ within the CIGS-1 absorber layer and 2.37 × 10 ¹⁵ cm ⁻³ within the CIGS-2 absorber layer. The average efficiency values are 5.71% for CIGSe-1 and 6.82% for CIGSe-2. Additionally, the average V _OC deficit (E _g /q − V _OC ) values are 0.758 V for CIGSe-1 and 0.731 V for CIGSe-2. As a result, in the 7 CIGSe-2 samples, the open-circuit voltage and efficiencies are improved. Thus, it is demonstrated that appropriate E _g grading in a CIGSe layer with a wider E _g on the back surface can result in improved performance.

Original language	English
Pages (from-to)	437-442
Number of pages	6
Journal	Journal of Industrial and Engineering Chemistry
Volume	76
DOIs	https://doi.org/10.1016/j.jiec.2019.04.010
State	Published - 25 Aug 2019

Bibliographical note

Publisher Copyright:
© 2019 The Korean Society of Industrial and Engineering Chemistry

Keywords

Bandgap grading
CIGSe
Defect
Solar cell
Surface potential

Access to Document

10.1016/j.jiec.2019.04.010

Cite this

Kim, Y. I., Yang, K. J., Kim, S. Y., Kang, J. K., Kim, J., Jo, W., Yoo, H., Kim, J. H., & Kim, D. H. (2019). The characteristics of Cu(In, Ga)Se ₂ thin-film solar cells by bandgap grading Journal of Industrial and Engineering Chemistry, 76, 437-442. https://doi.org/10.1016/j.jiec.2019.04.010

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title = " The characteristics of Cu(In, Ga)Se 2 thin-film solar cells by bandgap grading ",

abstract = " We investigated the characteristics of Cu(In, Ga)Se 2 solar cells with bandgap (E g ) grading. Two precursor types were employed: Mo/Cu 0.75 Ga 0.25 /In/Ga 2 Se 3 (CIGSe-1) and Mo/Cu/In/Ga 2 Se 3 (CIGSe-2). In CIGSe-1, the range of depths with a high Ga content is wider than that in CIGSe-2; thus, the region in which the main electron-trapping clusters and high-population deep donor defects can form is larger, and the defect density is higher. In the defect energy level range, various other defects and defect clusters exist with a defect density of 2.83 × 10 15 cm −3 within the CIGS-1 absorber layer and 2.37 × 10 15 cm −3 within the CIGS-2 absorber layer. The average efficiency values are 5.71% for CIGSe-1 and 6.82% for CIGSe-2. Additionally, the average V OC deficit (E g /q − V OC ) values are 0.758 V for CIGSe-1 and 0.731 V for CIGSe-2. As a result, in the 7 CIGSe-2 samples, the open-circuit voltage and efficiencies are improved. Thus, it is demonstrated that appropriate E g grading in a CIGSe layer with a wider E g on the back surface can result in improved performance.",

keywords = "Bandgap grading, CIGSe, Defect, Solar cell, Surface potential",

author = "Kim, {Young Ill} and Yang, {Kee Jeong} and Kim, {Se Yun} and Kang, {Jin Kyu} and Juran Kim and William Jo and Hyesun Yoo and Kim, {Jun Ho} and Kim, {Dae Hwan}",

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year = "2019",

month = aug,

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doi = "10.1016/j.jiec.2019.04.010",

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Kim, YI, Yang, KJ, Kim, SY, Kang, JK, Kim, J, Jo, W, Yoo, H, Kim, JH & Kim, DH 2019, ' The characteristics of Cu(In, Ga)Se ₂ thin-film solar cells by bandgap grading ', Journal of Industrial and Engineering Chemistry, vol. 76, pp. 437-442. https://doi.org/10.1016/j.jiec.2019.04.010

The characteristics of Cu(In, Ga)Se ₂ thin-film solar cells by bandgap grading . / Kim, Young Ill; Yang, Kee Jeong; Kim, Se Yun et al.
In: Journal of Industrial and Engineering Chemistry, Vol. 76, 25.08.2019, p. 437-442.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - The characteristics of Cu(In, Ga)Se 2 thin-film solar cells by bandgap grading

AU - Kim, Young Ill

AU - Yang, Kee Jeong

AU - Kim, Se Yun

AU - Kang, Jin Kyu

AU - Kim, Juran

AU - Jo, William

AU - Yoo, Hyesun

AU - Kim, Jun Ho

AU - Kim, Dae Hwan

PY - 2019/8/25

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N2 - We investigated the characteristics of Cu(In, Ga)Se 2 solar cells with bandgap (E g ) grading. Two precursor types were employed: Mo/Cu 0.75 Ga 0.25 /In/Ga 2 Se 3 (CIGSe-1) and Mo/Cu/In/Ga 2 Se 3 (CIGSe-2). In CIGSe-1, the range of depths with a high Ga content is wider than that in CIGSe-2; thus, the region in which the main electron-trapping clusters and high-population deep donor defects can form is larger, and the defect density is higher. In the defect energy level range, various other defects and defect clusters exist with a defect density of 2.83 × 10 15 cm −3 within the CIGS-1 absorber layer and 2.37 × 10 15 cm −3 within the CIGS-2 absorber layer. The average efficiency values are 5.71% for CIGSe-1 and 6.82% for CIGSe-2. Additionally, the average V OC deficit (E g /q − V OC ) values are 0.758 V for CIGSe-1 and 0.731 V for CIGSe-2. As a result, in the 7 CIGSe-2 samples, the open-circuit voltage and efficiencies are improved. Thus, it is demonstrated that appropriate E g grading in a CIGSe layer with a wider E g on the back surface can result in improved performance.

AB - We investigated the characteristics of Cu(In, Ga)Se 2 solar cells with bandgap (E g ) grading. Two precursor types were employed: Mo/Cu 0.75 Ga 0.25 /In/Ga 2 Se 3 (CIGSe-1) and Mo/Cu/In/Ga 2 Se 3 (CIGSe-2). In CIGSe-1, the range of depths with a high Ga content is wider than that in CIGSe-2; thus, the region in which the main electron-trapping clusters and high-population deep donor defects can form is larger, and the defect density is higher. In the defect energy level range, various other defects and defect clusters exist with a defect density of 2.83 × 10 15 cm −3 within the CIGS-1 absorber layer and 2.37 × 10 15 cm −3 within the CIGS-2 absorber layer. The average efficiency values are 5.71% for CIGSe-1 and 6.82% for CIGSe-2. Additionally, the average V OC deficit (E g /q − V OC ) values are 0.758 V for CIGSe-1 and 0.731 V for CIGSe-2. As a result, in the 7 CIGSe-2 samples, the open-circuit voltage and efficiencies are improved. Thus, it is demonstrated that appropriate E g grading in a CIGSe layer with a wider E g on the back surface can result in improved performance.

KW - Bandgap grading

KW - CIGSe

KW - Defect

KW - Solar cell

KW - Surface potential

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