Abstract
The anti-reflection coating using silicon monoxide (SiO) and silicon nitride (SiNx) for the InP based solar cells was investigated to improve the efficiency of the solar cell. The SiO and SiNx were chosen for single layer anti-reflection coating to reduce the reflection because of the difference of reflective index between the air and semiconductor. The SiO and SiNx is the suitable material for single layer anti-reflection coating from the calculation of the reflectivity with wavelength since their reflective index is around 2. The InP/InGaAsP double hetero-junction solar cells with anti-reflection coating using SiO and SiNx were fabricated. The efficiencies were improved by 10% and 25% for two solar cells with SiO and SiNx anti-reflection coating respectively. I-V characteristics of solar cell with SiO AR coating was improved comparing the before and after the evaporation process. The solar cells with anti-reflection coating using the SiO showed better results for efficiency. SiO is more suitable material for AR coating compared with SiNx.
| Original language | English |
|---|---|
| Pages (from-to) | 871-874 |
| Number of pages | 4 |
| Journal | Journal of Computational and Theoretical Nanoscience |
| Volume | 12 |
| Issue number | 5 |
| DOIs | |
| State | Published - 1 May 2015 |
Bibliographical note
Publisher Copyright:Copyright © 2015 American Scientific Publishers. All rights reserved.
Keywords
- Anti-Reflection coating
- InP
- Silicon monoxide
- Silicon nitride
- Solar cell