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Temperature dependence of electron mobility in uniaxial strained nMOSFETs
Wookyung Sun
, Hyungsoon Shin
Electronic and Electrical Engineering
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peer-review
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Engineering
Compressive Stress
50%
Enhanced Strain
50%
Temperature Condition
50%
Temperature Dependence
100%
Tensile Stress σ
50%
Material Science
Electron Mobility
100%
Ultimate Tensile Strength
33%