Temperature dependence of electron mobility in uniaxial strained nMOSFETs

Wookyung Sun; Hyungsoon Shin

doi:10.5573/JSTS.2014.14.2.146

Temperature dependence of electron mobility in uniaxial strained nMOSFETs

Wookyung Sun, Hyungsoon Shin

Electronic and Electrical Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

The temperature dependence of strainenhanced electron mobility in nMOSFETs is investigated by using a self-consistent Schrödinger- Poisson solver. The calculated results suggest that vertical compressive stress is more efficient to maintain the strain-enhanced electron mobility than longitudinal tensile stress in high temperature condition.

Original language	English
Pages (from-to)	146-152
Number of pages	7
Journal	Journal of Semiconductor Technology and Science
Volume	14
Issue number	2
DOIs	https://doi.org/10.5573/JSTS.2014.14.2.146
State	Published - 2014

Keywords

Electron mobility
Intervalley phonon mobility
Intravalley phonon mobility
Strain
Stress
Temperature

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title = "Temperature dependence of electron mobility in uniaxial strained nMOSFETs",

abstract = "The temperature dependence of strainenhanced electron mobility in nMOSFETs is investigated by using a self-consistent Schr{\"o}dinger- Poisson solver. The calculated results suggest that vertical compressive stress is more efficient to maintain the strain-enhanced electron mobility than longitudinal tensile stress in high temperature condition.",

keywords = "Electron mobility, Intervalley phonon mobility, Intravalley phonon mobility, Strain, Stress, Temperature",

author = "Wookyung Sun and Hyungsoon Shin",

year = "2014",

doi = "10.5573/JSTS.2014.14.2.146",

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T1 - Temperature dependence of electron mobility in uniaxial strained nMOSFETs

AU - Sun, Wookyung

AU - Shin, Hyungsoon

PY - 2014

Y1 - 2014

N2 - The temperature dependence of strainenhanced electron mobility in nMOSFETs is investigated by using a self-consistent Schrödinger- Poisson solver. The calculated results suggest that vertical compressive stress is more efficient to maintain the strain-enhanced electron mobility than longitudinal tensile stress in high temperature condition.

AB - The temperature dependence of strainenhanced electron mobility in nMOSFETs is investigated by using a self-consistent Schrödinger- Poisson solver. The calculated results suggest that vertical compressive stress is more efficient to maintain the strain-enhanced electron mobility than longitudinal tensile stress in high temperature condition.

KW - Electron mobility

KW - Intervalley phonon mobility

KW - Intravalley phonon mobility

KW - Strain

KW - Stress

KW - Temperature

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DO - 10.5573/JSTS.2014.14.2.146

M3 - Article

AN - SCOPUS:84900017646

SN - 1598-1657

VL - 14

SP - 146

EP - 152

JO - Journal of Semiconductor Technology and Science

JF - Journal of Semiconductor Technology and Science

IS - 2

ER -

Temperature dependence of electron mobility in uniaxial strained nMOSFETs

Abstract

Keywords

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