Temperature dependence of electron mobility in uniaxial strained nMOSFETs

Wookyung Sun, Hyungsoon Shin

Research output: Contribution to journalArticlepeer-review


The temperature dependence of strainenhanced electron mobility in nMOSFETs is investigated by using a self-consistent Schrödinger- Poisson solver. The calculated results suggest that vertical compressive stress is more efficient to maintain the strain-enhanced electron mobility than longitudinal tensile stress in high temperature condition.

Original languageEnglish
Pages (from-to)146-152
Number of pages7
JournalJournal of Semiconductor Technology and Science
Issue number2
StatePublished - 2014


  • Electron mobility
  • Intervalley phonon mobility
  • Intravalley phonon mobility
  • Strain
  • Stress
  • Temperature


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