Ta Buffer Layer Effect on the Growth of Fe₃O₄ Thin Films Prepared by RF-sputtering

Si(100)\200 nm SiO\5 nm Ta\5 nm MgO\35 nm F^O multi-layers were prepared by using RF-sputtering and ultra-high vacuum molecular beam epitaxy (UHV-MBE) techniques. After post-annealing the multi-layers at 500 ⁰C for 1 hour under the high vacuum of ~1 x 10^_6 Torr, we observed ferromagnetic properties at room temperature as well as the Verwey transition which is the typical features of magnetite crystals formed. We have carried out a comparative study of the effect of Ta buffered layer on the crystallinity and magnetic properties of Fe₃O₄ thin films prepared under different growth and annealing conditions.