Ta Buffer Layer Effect on the Growth of Fe3O4 Thin Films Prepared by RF-sputtering

Jihyeon Gook, Nyun Jong Lee, Yu Jeong Bae, Tae Hee Kim

Research output: Contribution to journalArticlepeer-review


Si(100)\200 nm SiO\5 nm Ta\5 nm MgO\35 nm F^O multi-layers were prepared by using RF-sputtering and ultra-high vacuum molecular beam epitaxy (UHV-MBE) techniques. After post-annealing the multi-layers at 500 0C for 1 hour under the high vacuum of ~1 x 10_6 Torr, we observed ferromagnetic properties at room temperature as well as the Verwey transition which is the typical features of magnetite crystals formed. We have carried out a comparative study of the effect of Ta buffered layer on the crystallinity and magnetic properties of Fe3O4 thin films prepared under different growth and annealing conditions.

Original languageEnglish
Pages (from-to)43-46
Number of pages4
JournalJournal of Korean Medical Science
Issue number2
StatePublished - 2015

Bibliographical note

Publisher Copyright:
© 2015. The Korean Magnetics Society. All Rights Reserved.


  • FeO thin film, RF-sputtering, Ta buffer layer


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