Synthesis and transport properties of La2 - xSrxCuO4 thin films deposited by laser ablation

G. C. Yi, W. Jo, Y. K. Kim, T. W. Noh, D. K. Ko, H. Noh, Z. G. Khim

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La2 - xSrxCuO4 high-Tc thin films are fabricated in situ using second harmonics of a pulsed Nd:YAG laser. Effects of the growth parameters, such as substrate temperature and oxygen pressure, on the physical properties of the films are investigated with resistance and X-ray diffractometry measurements. The films deposited on SrTiO3 (100) and MgO (100) substrates have zero resistance transition temperatures around 22 K. Most grains in these films are aligned with their c-axes perpendicular to the substrates. The current-voltage (I-V) characteristics of a patterned La2 - xSrxCuO4 thin film are measured at various temperatures near Tc. From the I-V characteristic curves, it is found that the measured critical current density (Jc) follows a power law Jc ∞ (1 - T/Tc)n with n ∼ 1.5. Also, the behaviors of the I-V curves are discussed in terms of the scaling theory of the vortex-glass model.

Original languageEnglish
Pages (from-to)293-300
Number of pages8
JournalPhysica C: Superconductivity and its Applications
Issue number3-4
StatePublished - 10 May 1992


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