Synaptic plasticity and non-volatile memory characteristics in TiN-nanocrystal-embedded 3D vertical memristor-based synapses for neuromorphic systems

Seyeong Yang, Taegyun Kim, Sunghun Kim, Daewon Chung, Tae Hyeon Kim, Jung Kyu Lee, Sungjoon Kim, Muhammad Ismail, Chandreswar Mahata, Sungjun Kim, Seongjae Cho

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

Although vertical configurations for high-density storage require challenging process steps, such as etching high aspect ratios and atomic layer deposition (ALD), they are more affordable with a relatively simple lithography process and have been employed in many studies. Herein, the potential of memristors with CMOS-compatible 3D vertical stacked structures of Pt/Ti/HfOx/TiN-NCs/HfOx/TiN is examined for use in neuromorphic systems. The electrical characteristics (including I-V properties, retention, and endurance) were investigated for both planar single cells and vertical resistive random-access memory (VRRAM) cells at each layer, demonstrating their outstanding non-volatile memory capabilities. In addition, various synaptic functions (including potentiation and depression) under different pulse schemes, excitatory postsynaptic current (EPSC), and spike-timing-dependent plasticity (STDP) were investigated. In pattern recognition simulations, an improved recognition rate was achieved by the linearly changing conductance, which was enhanced by the incremental pulse scheme. The achieved results demonstrated the feasibility of employing VRRAM with TiN nanocrystals in neuromorphic systems that resemble the human brain.

Original languageEnglish
Pages (from-to)13239-13251
Number of pages13
JournalNanoscale
Volume15
Issue number32
DOIs
StatePublished - 12 Jul 2023

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© 2023 The Royal Society of Chemistry.

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