Synaptic behaviors of HfO                         2                          ReRAM by pulse frequency modulation

Dong Keun Lee; Min Hwi Kim; Tae Hyeon Kim; Suhyun Bang; Yeon Joon Choi; Sungjun Kim; Seongjae Cho; Byung Gook Park

doi:10.1016/j.sse.2019.02.008

Synaptic behaviors of HfO ₂ ReRAM by pulse frequency modulation

Dong Keun Lee
, Min Hwi Kim
, Tae Hyeon Kim
, Suhyun Bang
, Yeon Joon Choi
, Sungjun Kim
, Seongjae Cho
, Byung Gook Park

Electronic and Electrical Engineering

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

A resistive switching random-access memory (ReRAM) device with TiN/HfO ₂ /SiO ₂ /p ⁺ -Si stack is analyzed for synaptic behavior. Fabricated RRAM device stack consists of heavily doped p-type silicon bottom electrode (BE), HfO ₂ as a switching layer, SiO ₂ as a tunneling barrier layer and TiN as a top electrode (TE). The RRAM cell successfully shows I-V curves including SET and RESET operations in DC sweep mode. By inserting a SiO ₂ tunneling barrier layer, gradual switching characteristics are obtained by pulse operation. By optimizing the pulse scheme applied to the device, biological synaptic plasticity of long-term potentiation and depression is demonstrated. Finally, spike rate-dependent plasticity (SRDP) learning rule is realized by applying pulses with different frequencies to both terminals of the ReRAM device.

Original language	English
Pages (from-to)	31-35
Number of pages	5
Journal	Solid-State Electronics
Volume	154
DOIs	https://doi.org/10.1016/j.sse.2019.02.008
State	Published - Apr 2019

Bibliographical note

Funding Information:
This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Ministry of Science, ICT & Future Planning ( 2018R1A2A1A05023517 ) and also supported in part by the Brain Korea 21 Plus Program in 2018.

Publisher Copyright:
© 2019

Keywords

Depression
Potentiation
Resistive-switching random-access memory
Spike rate-dependent plasticity (SRDP)
Synaptic plasticity
Tunneling barrier layer

Access to Document

10.1016/j.sse.2019.02.008

Cite this

@article{009eed5415c74c68a98072fdf359a940,

title = " Synaptic behaviors of HfO 2 ReRAM by pulse frequency modulation ",

abstract = " A resistive switching random-access memory (ReRAM) device with TiN/HfO 2 /SiO 2 /p + -Si stack is analyzed for synaptic behavior. Fabricated RRAM device stack consists of heavily doped p-type silicon bottom electrode (BE), HfO 2 as a switching layer, SiO 2 as a tunneling barrier layer and TiN as a top electrode (TE). The RRAM cell successfully shows I-V curves including SET and RESET operations in DC sweep mode. By inserting a SiO 2 tunneling barrier layer, gradual switching characteristics are obtained by pulse operation. By optimizing the pulse scheme applied to the device, biological synaptic plasticity of long-term potentiation and depression is demonstrated. Finally, spike rate-dependent plasticity (SRDP) learning rule is realized by applying pulses with different frequencies to both terminals of the ReRAM device.",

keywords = "Depression, Potentiation, Resistive-switching random-access memory, Spike rate-dependent plasticity (SRDP), Synaptic plasticity, Tunneling barrier layer",

author = "Lee, \{Dong Keun\} and Kim, \{Min Hwi\} and Kim, \{Tae Hyeon\} and Suhyun Bang and Choi, \{Yeon Joon\} and Sungjun Kim and Seongjae Cho and Park, \{Byung Gook\}",

note = "Funding Information: This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Ministry of Science, ICT \& Future Planning ( 2018R1A2A1A05023517 ) and also supported in part by the Brain Korea 21 Plus Program in 2018. Publisher Copyright: {\textcopyright} 2019",

year = "2019",

month = apr,

doi = "10.1016/j.sse.2019.02.008",

language = "English",

volume = "154",

pages = "31--35",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Ltd.",

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T1 - Synaptic behaviors of HfO 2 ReRAM by pulse frequency modulation

AU - Lee, Dong Keun

AU - Kim, Min Hwi

AU - Kim, Tae Hyeon

AU - Bang, Suhyun

AU - Choi, Yeon Joon

AU - Kim, Sungjun

AU - Cho, Seongjae

AU - Park, Byung Gook

N1 - Funding Information: This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Ministry of Science, ICT & Future Planning ( 2018R1A2A1A05023517 ) and also supported in part by the Brain Korea 21 Plus Program in 2018. Publisher Copyright: © 2019

PY - 2019/4

Y1 - 2019/4

N2 - A resistive switching random-access memory (ReRAM) device with TiN/HfO 2 /SiO 2 /p + -Si stack is analyzed for synaptic behavior. Fabricated RRAM device stack consists of heavily doped p-type silicon bottom electrode (BE), HfO 2 as a switching layer, SiO 2 as a tunneling barrier layer and TiN as a top electrode (TE). The RRAM cell successfully shows I-V curves including SET and RESET operations in DC sweep mode. By inserting a SiO 2 tunneling barrier layer, gradual switching characteristics are obtained by pulse operation. By optimizing the pulse scheme applied to the device, biological synaptic plasticity of long-term potentiation and depression is demonstrated. Finally, spike rate-dependent plasticity (SRDP) learning rule is realized by applying pulses with different frequencies to both terminals of the ReRAM device.

AB - A resistive switching random-access memory (ReRAM) device with TiN/HfO 2 /SiO 2 /p + -Si stack is analyzed for synaptic behavior. Fabricated RRAM device stack consists of heavily doped p-type silicon bottom electrode (BE), HfO 2 as a switching layer, SiO 2 as a tunneling barrier layer and TiN as a top electrode (TE). The RRAM cell successfully shows I-V curves including SET and RESET operations in DC sweep mode. By inserting a SiO 2 tunneling barrier layer, gradual switching characteristics are obtained by pulse operation. By optimizing the pulse scheme applied to the device, biological synaptic plasticity of long-term potentiation and depression is demonstrated. Finally, spike rate-dependent plasticity (SRDP) learning rule is realized by applying pulses with different frequencies to both terminals of the ReRAM device.

KW - Depression

KW - Potentiation

KW - Resistive-switching random-access memory

KW - Spike rate-dependent plasticity (SRDP)

KW - Synaptic plasticity

KW - Tunneling barrier layer

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DO - 10.1016/j.sse.2019.02.008

M3 - Article

AN - SCOPUS:85062292101

SN - 0038-1101

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SP - 31

EP - 35

JO - Solid-State Electronics

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