Synaptic behaviors of HfO                         2                          ReRAM by pulse frequency modulation

Dong Keun Lee; Min Hwi Kim; Tae Hyeon Kim; Suhyun Bang; Yeon Joon Choi; Sungjun Kim; Seongjae Cho; Byung Gook Park

doi:10.1016/j.sse.2019.02.008

Synaptic behaviors of HfO ₂ ReRAM by pulse frequency modulation

Dong Keun Lee, Min Hwi Kim, Tae Hyeon Kim, Suhyun Bang, Yeon Joon Choi, Sungjun Kim, Seongjae Cho, Byung Gook Park

Electronic and Electrical Engineering

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

A resistive switching random-access memory (ReRAM) device with TiN/HfO ₂ /SiO ₂ /p ⁺ -Si stack is analyzed for synaptic behavior. Fabricated RRAM device stack consists of heavily doped p-type silicon bottom electrode (BE), HfO ₂ as a switching layer, SiO ₂ as a tunneling barrier layer and TiN as a top electrode (TE). The RRAM cell successfully shows I-V curves including SET and RESET operations in DC sweep mode. By inserting a SiO ₂ tunneling barrier layer, gradual switching characteristics are obtained by pulse operation. By optimizing the pulse scheme applied to the device, biological synaptic plasticity of long-term potentiation and depression is demonstrated. Finally, spike rate-dependent plasticity (SRDP) learning rule is realized by applying pulses with different frequencies to both terminals of the ReRAM device.

Original language	English
Pages (from-to)	31-35
Number of pages	5
Journal	Solid-State Electronics
Volume	154
DOIs	https://doi.org/10.1016/j.sse.2019.02.008
State	Published - Apr 2019

Bibliographical note

Funding Information:
This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Ministry of Science, ICT & Future Planning ( 2018R1A2A1A05023517 ) and also supported in part by the Brain Korea 21 Plus Program in 2018.

Publisher Copyright:
© 2019

Keywords

Depression
Potentiation
Resistive-switching random-access memory
Spike rate-dependent plasticity (SRDP)
Synaptic plasticity
Tunneling barrier layer

Access to Document

10.1016/j.sse.2019.02.008

Cite this

@article{009eed5415c74c68a98072fdf359a940,

title = " Synaptic behaviors of HfO 2 ReRAM by pulse frequency modulation ",

abstract = " A resistive switching random-access memory (ReRAM) device with TiN/HfO 2 /SiO 2 /p + -Si stack is analyzed for synaptic behavior. Fabricated RRAM device stack consists of heavily doped p-type silicon bottom electrode (BE), HfO 2 as a switching layer, SiO 2 as a tunneling barrier layer and TiN as a top electrode (TE). The RRAM cell successfully shows I-V curves including SET and RESET operations in DC sweep mode. By inserting a SiO 2 tunneling barrier layer, gradual switching characteristics are obtained by pulse operation. By optimizing the pulse scheme applied to the device, biological synaptic plasticity of long-term potentiation and depression is demonstrated. Finally, spike rate-dependent plasticity (SRDP) learning rule is realized by applying pulses with different frequencies to both terminals of the ReRAM device.",

keywords = "Depression, Potentiation, Resistive-switching random-access memory, Spike rate-dependent plasticity (SRDP), Synaptic plasticity, Tunneling barrier layer",

author = "Lee, {Dong Keun} and Kim, {Min Hwi} and Kim, {Tae Hyeon} and Suhyun Bang and Choi, {Yeon Joon} and Sungjun Kim and Seongjae Cho and Park, {Byung Gook}",

note = "Funding Information: This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Ministry of Science, ICT & Future Planning ( 2018R1A2A1A05023517 ) and also supported in part by the Brain Korea 21 Plus Program in 2018. Publisher Copyright: {\textcopyright} 2019",

year = "2019",

month = apr,

doi = "10.1016/j.sse.2019.02.008",

language = "English",

volume = "154",

pages = "31--35",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Ltd.",

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AU - Lee, Dong Keun

AU - Kim, Min Hwi

AU - Kim, Tae Hyeon

AU - Bang, Suhyun

AU - Choi, Yeon Joon

AU - Kim, Sungjun

AU - Cho, Seongjae

AU - Park, Byung Gook

N1 - Funding Information: This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Ministry of Science, ICT & Future Planning ( 2018R1A2A1A05023517 ) and also supported in part by the Brain Korea 21 Plus Program in 2018. Publisher Copyright: © 2019

PY - 2019/4

Y1 - 2019/4

N2 - A resistive switching random-access memory (ReRAM) device with TiN/HfO 2 /SiO 2 /p + -Si stack is analyzed for synaptic behavior. Fabricated RRAM device stack consists of heavily doped p-type silicon bottom electrode (BE), HfO 2 as a switching layer, SiO 2 as a tunneling barrier layer and TiN as a top electrode (TE). The RRAM cell successfully shows I-V curves including SET and RESET operations in DC sweep mode. By inserting a SiO 2 tunneling barrier layer, gradual switching characteristics are obtained by pulse operation. By optimizing the pulse scheme applied to the device, biological synaptic plasticity of long-term potentiation and depression is demonstrated. Finally, spike rate-dependent plasticity (SRDP) learning rule is realized by applying pulses with different frequencies to both terminals of the ReRAM device.

AB - A resistive switching random-access memory (ReRAM) device with TiN/HfO 2 /SiO 2 /p + -Si stack is analyzed for synaptic behavior. Fabricated RRAM device stack consists of heavily doped p-type silicon bottom electrode (BE), HfO 2 as a switching layer, SiO 2 as a tunneling barrier layer and TiN as a top electrode (TE). The RRAM cell successfully shows I-V curves including SET and RESET operations in DC sweep mode. By inserting a SiO 2 tunneling barrier layer, gradual switching characteristics are obtained by pulse operation. By optimizing the pulse scheme applied to the device, biological synaptic plasticity of long-term potentiation and depression is demonstrated. Finally, spike rate-dependent plasticity (SRDP) learning rule is realized by applying pulses with different frequencies to both terminals of the ReRAM device.

KW - Depression

KW - Potentiation

KW - Resistive-switching random-access memory

KW - Spike rate-dependent plasticity (SRDP)

KW - Synaptic plasticity

KW - Tunneling barrier layer

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