A resistive switching random-access memory (ReRAM) device with TiN/HfO 2 /SiO 2 /p + -Si stack is analyzed for synaptic behavior. Fabricated RRAM device stack consists of heavily doped p-type silicon bottom electrode (BE), HfO 2 as a switching layer, SiO 2 as a tunneling barrier layer and TiN as a top electrode (TE). The RRAM cell successfully shows I-V curves including SET and RESET operations in DC sweep mode. By inserting a SiO 2 tunneling barrier layer, gradual switching characteristics are obtained by pulse operation. By optimizing the pulse scheme applied to the device, biological synaptic plasticity of long-term potentiation and depression is demonstrated. Finally, spike rate-dependent plasticity (SRDP) learning rule is realized by applying pulses with different frequencies to both terminals of the ReRAM device.
Bibliographical noteFunding Information:
This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Ministry of Science, ICT & Future Planning ( 2018R1A2A1A05023517 ) and also supported in part by the Brain Korea 21 Plus Program in 2018.
- Resistive-switching random-access memory
- Spike rate-dependent plasticity (SRDP)
- Synaptic plasticity
- Tunneling barrier layer