The nature of the conduction-band minimum of GaAs1 - xNx (x≤0.7) is probed by performing resonant Raman scattering (RRS) on thin layers of GaAs1 - xNx epitaxially grown on Ge substrates. Strong resonance enhancement of the LO-phonon Raman intensity is observed with excitation energies near the E0 as well as E+ transitions. However, in contrast to the distinct LO-phonon linewidth resonance enhancement and activation of various X and L zone-boundary phonons brought about slightly below and near the E+ transition, respectively, we have not observed any resonant LO-phonon linewidth broadening or activation of sharp zone-boundary phonons near the E0 transition. The observed RRS results reveal that the conduction-band minimum of GaAs1 - xNx predominantly consists of the delocalized GaAs bulklike states of F symmetry.
|Number of pages||4|
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|State||Published - Apr 2003|