Switching and conduction mechanism of Cu/Si3N4/Si RRAM with CMOS compatibility

Sungjun Kim, Sunghun Jung, Min Hwi Kim, Seongjae Cho, Jong Ho Lee, Byung Gook Park

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations


In this work, we fabricated CMOS compatible Cu/Si3N4/Si RRAM, showing good resistive switching. This memory cell is stable for bipolar switching (BS) than unipolar switching (US). Trap-controlled space charge limited current (SCLC) conduction is observed. Low resistance state (LRS) shows semiconducting behavior according to the temperature dependency.

Original languageEnglish
Title of host publication2014 Silicon Nanoelectronics Workshop, SNW 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479956777
StatePublished - 4 Dec 2015
EventSilicon Nanoelectronics Workshop, SNW 2014 - Honolulu, United States
Duration: 8 Jun 20149 Jun 2014

Publication series

Name2014 Silicon Nanoelectronics Workshop, SNW 2014


ConferenceSilicon Nanoelectronics Workshop, SNW 2014
Country/TerritoryUnited States

Bibliographical note

Publisher Copyright:
© 2014 IEEE.


Dive into the research topics of 'Switching and conduction mechanism of Cu/Si3N4/Si RRAM with CMOS compatibility'. Together they form a unique fingerprint.

Cite this