Switching and conduction mechanism of Cu/Si3N4/Si RRAM with CMOS compatibility

Sungjun Kim; Sunghun Jung; Min Hwi Kim; Seongjae Cho; Jong Ho Lee; Byung Gook Park

doi:10.1109/SNW.2014.7348603

Switching and conduction mechanism of Cu/Si3N4/Si RRAM with CMOS compatibility

Sungjun Kim, Sunghun Jung, Min Hwi Kim, Seongjae Cho, Jong Ho Lee, Byung Gook Park

Electronic and Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

In this work, we fabricated CMOS compatible Cu/Si³N⁴/Si RRAM, showing good resistive switching. This memory cell is stable for bipolar switching (BS) than unipolar switching (US). Trap-controlled space charge limited current (SCLC) conduction is observed. Low resistance state (LRS) shows semiconducting behavior according to the temperature dependency.

Original language	English
Title of host publication	2014 Silicon Nanoelectronics Workshop, SNW 2014
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781479956777
DOIs	https://doi.org/10.1109/SNW.2014.7348603
State	Published - 4 Dec 2015
Event	Silicon Nanoelectronics Workshop, SNW 2014 - Honolulu, United States Duration: 8 Jun 2014 → 9 Jun 2014

Publication series

Name	2014 Silicon Nanoelectronics Workshop, SNW 2014

Conference

Conference	Silicon Nanoelectronics Workshop, SNW 2014
Country/Territory	United States
City	Honolulu
Period	8/06/14 → 9/06/14

Bibliographical note

Publisher Copyright:
© 2014 IEEE.

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10.1109/SNW.2014.7348603

Cite this

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title = "Switching and conduction mechanism of Cu/Si3N4/Si RRAM with CMOS compatibility",

abstract = "In this work, we fabricated CMOS compatible Cu/Si3N4/Si RRAM, showing good resistive switching. This memory cell is stable for bipolar switching (BS) than unipolar switching (US). Trap-controlled space charge limited current (SCLC) conduction is observed. Low resistance state (LRS) shows semiconducting behavior according to the temperature dependency.",

author = "Sungjun Kim and Sunghun Jung and Kim, {Min Hwi} and Seongjae Cho and Lee, {Jong Ho} and Park, {Byung Gook}",

note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; Silicon Nanoelectronics Workshop, SNW 2014 ; Conference date: 08-06-2014 Through 09-06-2014",

year = "2015",

month = dec,

day = "4",

doi = "10.1109/SNW.2014.7348603",

language = "English",

series = "2014 Silicon Nanoelectronics Workshop, SNW 2014",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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Kim, S, Jung, S, Kim, MH, Cho, S, Lee, JH & Park, BG 2015, Switching and conduction mechanism of Cu/Si3N4/Si RRAM with CMOS compatibility. in 2014 Silicon Nanoelectronics Workshop, SNW 2014., 7348603, 2014 Silicon Nanoelectronics Workshop, SNW 2014, Institute of Electrical and Electronics Engineers Inc., Silicon Nanoelectronics Workshop, SNW 2014, Honolulu, United States, 8/06/14. https://doi.org/10.1109/SNW.2014.7348603

Switching and conduction mechanism of Cu/Si3N4/Si RRAM with CMOS compatibility. / Kim, Sungjun; Jung, Sunghun; Kim, Min Hwi et al.
2014 Silicon Nanoelectronics Workshop, SNW 2014. Institute of Electrical and Electronics Engineers Inc., 2015. 7348603 (2014 Silicon Nanoelectronics Workshop, SNW 2014).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Lee, Jong Ho

AU - Park, Byung Gook

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AB - In this work, we fabricated CMOS compatible Cu/Si3N4/Si RRAM, showing good resistive switching. This memory cell is stable for bipolar switching (BS) than unipolar switching (US). Trap-controlled space charge limited current (SCLC) conduction is observed. Low resistance state (LRS) shows semiconducting behavior according to the temperature dependency.

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Switching and conduction mechanism of Cu/Si3N4/Si RRAM with CMOS compatibility

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