Suspended MoTe2field effect transistors with ionic liquid gate

W. R. Choi; J. H. Hong; Y. G. You; E. E.B. Campbell; S. H. Jhang

doi:10.1063/5.0065568

Suspended MoTe₂field effect transistors with ionic liquid gate

W. R. Choi, J. H. Hong, Y. G. You, E. E.B. Campbell, S. H. Jhang

Department of Physics

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

The electrical performance of suspended few-layer MoTe2 field-effect-transistors with ionic liquid gating has been investigated. The suspended structure not only enhances the mobility of MoTe2 by removing the influence of the substrate but also allows ions to accumulate on both the top and the bottom surface of MoTe2. The consequent increase in the gate capacitance resulted in an improved subthreshold swing (∼73 mV/dec) and on-off ratio (106) at room temperature for suspended MoTe2 compared to substrate-supported devices. Suspended transistors with ionic liquid gating enable a larger charge density compared to ionic liquid gated supported devices and may provide a useful platform to study screening physics in 2D materials.

Original language	English
Article number	223105
Journal	Applied Physics Letters
Volume	119
Issue number	22
DOIs	https://doi.org/10.1063/5.0065568
State	Published - 29 Nov 2021

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title = "Suspended MoTe2field effect transistors with ionic liquid gate",

abstract = "The electrical performance of suspended few-layer MoTe2 field-effect-transistors with ionic liquid gating has been investigated. The suspended structure not only enhances the mobility of MoTe2 by removing the influence of the substrate but also allows ions to accumulate on both the top and the bottom surface of MoTe2. The consequent increase in the gate capacitance resulted in an improved subthreshold swing (∼73 mV/dec) and on-off ratio (106) at room temperature for suspended MoTe2 compared to substrate-supported devices. Suspended transistors with ionic liquid gating enable a larger charge density compared to ionic liquid gated supported devices and may provide a useful platform to study screening physics in 2D materials.",

author = "Choi, {W. R.} and Hong, {J. H.} and You, {Y. G.} and Campbell, {E. E.B.} and Jhang, {S. H.}",

note = "Funding Information: See the supplementary material for the estimation of gate capacitance, capacitive force, low-field mobility, and contact resistance. This work was supported by Konkuk University in 2017. Publisher Copyright: {\textcopyright} 2021 Author(s).",

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AU - Choi, W. R.

AU - Hong, J. H.

AU - You, Y. G.

AU - Campbell, E. E.B.

AU - Jhang, S. H.

N1 - Funding Information: See the supplementary material for the estimation of gate capacitance, capacitive force, low-field mobility, and contact resistance. This work was supported by Konkuk University in 2017. Publisher Copyright: © 2021 Author(s).

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Y1 - 2021/11/29

N2 - The electrical performance of suspended few-layer MoTe2 field-effect-transistors with ionic liquid gating has been investigated. The suspended structure not only enhances the mobility of MoTe2 by removing the influence of the substrate but also allows ions to accumulate on both the top and the bottom surface of MoTe2. The consequent increase in the gate capacitance resulted in an improved subthreshold swing (∼73 mV/dec) and on-off ratio (106) at room temperature for suspended MoTe2 compared to substrate-supported devices. Suspended transistors with ionic liquid gating enable a larger charge density compared to ionic liquid gated supported devices and may provide a useful platform to study screening physics in 2D materials.

AB - The electrical performance of suspended few-layer MoTe2 field-effect-transistors with ionic liquid gating has been investigated. The suspended structure not only enhances the mobility of MoTe2 by removing the influence of the substrate but also allows ions to accumulate on both the top and the bottom surface of MoTe2. The consequent increase in the gate capacitance resulted in an improved subthreshold swing (∼73 mV/dec) and on-off ratio (106) at room temperature for suspended MoTe2 compared to substrate-supported devices. Suspended transistors with ionic liquid gating enable a larger charge density compared to ionic liquid gated supported devices and may provide a useful platform to study screening physics in 2D materials.

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Suspended MoTe2field effect transistors with ionic liquid gate

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Suspended MoTe₂field effect transistors with ionic liquid gate