Surface oxygen vacancy origin of electron accumulation in indium oxide

Aron Walsh

doi:10.1063/1.3604811

Surface oxygen vacancy origin of electron accumulation in indium oxide

Aron Walsh

Department of Physics

Research output: Contribution to journal › Article › peer-review

82 Scopus citations

Abstract

Metal oxides are typically insulating materials that can be made conductive through aliovalent doping and/or non-stoichiometry. Recent studies have identified conductive states at surfaces and interfaces of pure oxide materials; high electron concentrations are present, resulting in a high-mobility two-dimensional electron gas. We demonstrate for In₂O₃ that the energy required to form an oxygen vacancy decreases rapidly towards the (111) surface, where the coordination environment is lowered. This is a general feature of metal oxide systems that can result in a metal-insulator transition where donors are produced at chemically reduced extended defects.

Original language	English
Article number	261910
Journal	Applied Physics Letters
Volume	98
Issue number	26
DOIs	https://doi.org/10.1063/1.3604811
State	Published - 27 Jun 2011

Bibliographical note

Funding Information:
I would like to acknowledge useful discussions with P. D. C. King, C. R. A. Catlow, and A. A. Sokol. Access to the HECToR supercomputer was facilitated through membership of the UK’s HPC Materials Chemistry Consortium, which is funded by EPSRC (Grant No. EP/F067496).

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abstract = "Metal oxides are typically insulating materials that can be made conductive through aliovalent doping and/or non-stoichiometry. Recent studies have identified conductive states at surfaces and interfaces of pure oxide materials; high electron concentrations are present, resulting in a high-mobility two-dimensional electron gas. We demonstrate for In2O3 that the energy required to form an oxygen vacancy decreases rapidly towards the (111) surface, where the coordination environment is lowered. This is a general feature of metal oxide systems that can result in a metal-insulator transition where donors are produced at chemically reduced extended defects.",

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AB - Metal oxides are typically insulating materials that can be made conductive through aliovalent doping and/or non-stoichiometry. Recent studies have identified conductive states at surfaces and interfaces of pure oxide materials; high electron concentrations are present, resulting in a high-mobility two-dimensional electron gas. We demonstrate for In2O3 that the energy required to form an oxygen vacancy decreases rapidly towards the (111) surface, where the coordination environment is lowered. This is a general feature of metal oxide systems that can result in a metal-insulator transition where donors are produced at chemically reduced extended defects.

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Surface oxygen vacancy origin of electron accumulation in indium oxide

Abstract

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