Suppressed recombination in quantum dot-sensitized solar cells with blocking layers on FTO substrates

Wonjoo Lee; Beomjin Yoo; Kyungkon Kim; Doh Kwon Lee; Honggon Kim; Min Jae Ko

doi:10.1166/jnn.2012.4579

Suppressed recombination in quantum dot-sensitized solar cells with blocking layers on FTO substrates

Wonjoo Lee, Beomjin Yoo, Kyungkon Kim, Doh Kwon Lee, Honggon Kim, Min Jae Ko

Department of Chemistry & Nanoscience

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

The compact and thin TiO ₂ blocking layers (c-TiO ₂) were formed on F-doped SnO ₂ (FTO) substrate in quantum dots-sensitized solar cells (QSSCs) by chemical deposition. The c-TiO ₂ layers induced indirect contact between electrolyte and FTO electrode, which reduced leakage in QSSCs. The QSSCs showed power conversion efficiency (Eff) of 3.85% in the presence of c-TiO ₂ layers which leads to 21% improved compared to that without c-TiO ₂ layers (Eff = 3.18%). The presence of the c-TiO ₂ layers in QSSCs also improved the stability under illumination.

Original language	English
Pages (from-to)	1492-1496
Number of pages	5
Journal	Journal of Nanoscience and Nanotechnology
Volume	12
Issue number	2
DOIs	https://doi.org/10.1166/jnn.2012.4579
State	Published - 2012

Keywords

Blocking layer
Photodegradation
Quantum dots-sensitized solar cell
Recombination
Stability

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title = "Suppressed recombination in quantum dot-sensitized solar cells with blocking layers on FTO substrates",

abstract = "The compact and thin TiO 2 blocking layers (c-TiO 2) were formed on F-doped SnO 2 (FTO) substrate in quantum dots-sensitized solar cells (QSSCs) by chemical deposition. The c-TiO 2 layers induced indirect contact between electrolyte and FTO electrode, which reduced leakage in QSSCs. The QSSCs showed power conversion efficiency (Eff) of 3.85% in the presence of c-TiO 2 layers which leads to 21% improved compared to that without c-TiO 2 layers (Eff = 3.18%). The presence of the c-TiO 2 layers in QSSCs also improved the stability under illumination.",

keywords = "Blocking layer, Photodegradation, Quantum dots-sensitized solar cell, Recombination, Stability",

author = "Wonjoo Lee and Beomjin Yoo and Kyungkon Kim and Lee, {Doh Kwon} and Honggon Kim and Ko, {Min Jae}",

year = "2012",

doi = "10.1166/jnn.2012.4579",

language = "English",

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journal = "Journal of Nanoscience and Nanotechnology",

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T1 - Suppressed recombination in quantum dot-sensitized solar cells with blocking layers on FTO substrates

AU - Lee, Wonjoo

AU - Yoo, Beomjin

AU - Kim, Kyungkon

AU - Lee, Doh Kwon

AU - Kim, Honggon

AU - Ko, Min Jae

PY - 2012

Y1 - 2012

N2 - The compact and thin TiO 2 blocking layers (c-TiO 2) were formed on F-doped SnO 2 (FTO) substrate in quantum dots-sensitized solar cells (QSSCs) by chemical deposition. The c-TiO 2 layers induced indirect contact between electrolyte and FTO electrode, which reduced leakage in QSSCs. The QSSCs showed power conversion efficiency (Eff) of 3.85% in the presence of c-TiO 2 layers which leads to 21% improved compared to that without c-TiO 2 layers (Eff = 3.18%). The presence of the c-TiO 2 layers in QSSCs also improved the stability under illumination.

AB - The compact and thin TiO 2 blocking layers (c-TiO 2) were formed on F-doped SnO 2 (FTO) substrate in quantum dots-sensitized solar cells (QSSCs) by chemical deposition. The c-TiO 2 layers induced indirect contact between electrolyte and FTO electrode, which reduced leakage in QSSCs. The QSSCs showed power conversion efficiency (Eff) of 3.85% in the presence of c-TiO 2 layers which leads to 21% improved compared to that without c-TiO 2 layers (Eff = 3.18%). The presence of the c-TiO 2 layers in QSSCs also improved the stability under illumination.

KW - Blocking layer

KW - Photodegradation

KW - Quantum dots-sensitized solar cell

KW - Recombination

KW - Stability

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AN - SCOPUS:84861710005

SN - 1533-4880

VL - 12

SP - 1492

EP - 1496

JO - Journal of Nanoscience and Nanotechnology

JF - Journal of Nanoscience and Nanotechnology

IS - 2

ER -

Suppressed recombination in quantum dot-sensitized solar cells with blocking layers on FTO substrates

Abstract

Keywords

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